Specific Process Knowledge/Thin Film deposition/ALD/Al2O3 deposition using ALD: Difference between revisions

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[[Image:ALD Al2O3 grow rate 200C.jpg|300x300px|thumb|center|Al<sub>2</sub>O<sub>3</sub> thickness as function of number of cycles, temperature 300 <sup>o</sup>C. Evgeniy Shkondin, DTU Danchip, February 2014.|}
[[Image:ALD Al2O3 grow rate 200C.jpg|300x300px|thumb|center|Al<sub>2</sub>O<sub>3</sub> thickness as function of number of cycles, temperature 200 <sup>o</sup>C. Evgeniy Shkondin, DTU Danchip, February 2014.]]
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Revision as of 15:41, 19 February 2014

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Al2O3 thickness as function of number of cycles, temperature 300 oC. Evgeniy Shkondin, DTU Danchip, February 2014.
Al2O3 thickness as function of number of cycles, temperature 200 oC. Evgeniy Shkondin, DTU Danchip, February 2014.
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