Specific Process Knowledge/Thin film deposition/Deposition of NiV: Difference between revisions

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Nickel Vanadium can be deposited by sputter evaporation. In the chart below you can compare the different deposition equipment.

	Sputter deposition (PVD co-sputter/evaporation)	Sputter deposition (Sputter-System Lesker)
Batch size	12x2" wafers or 12x4" wafers or 4x6" wafers	Pieces or 1x4" wafer or 1x6" wafer
Pre-clean	RF Ar clean	RF Ar clean
Layer thickness	About 10Å to 4000Å	About 10Å to 5000Å
Deposition rate	Depending on process parameters.	Depending on process parameters.
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon
Comment	Sputter target with NiV composition: Ni/V 93/7%	Sputter target with NiV composition: Ni/V 93/7%

Revision as of 09:19, 18 February 2014 view source Knil (talk \| contribs) DCH-Employees-701 420 edits No edit summary ← Older edit		Revision as of 09:20, 18 February 2014 view source Knil (talk \| contribs) DCH-Employees-701 420 edits No edit summary Newer edit →
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	Nickel Vanadium can be deposited by sputter evaporation. In the chart below you can compare the different deposition equipment.		Nickel Vanadium can be deposited by sputter evaporation. In the chart below you can compare the different deposition equipment.