Specific Process Knowledge/Etch: Difference between revisions

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*[[/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]]
*[[/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]]
*[[/KOH Etch|KOH Etch]] - ''Anisotropic silicon etch'' - ''writer:Flemming''
*[[/KOH Etch|KOH Etch]] - ''Anisotropic silicon etch'' - ''writer:Flemming''
*[[/Wet Polysilicon Etch|Wet Polysilicon Etch]] - ''Isotropic silicon etch''
*[[/Wet Polysilicon Etch|Wet Polysilicon Etch]] - ''Isotropic silicon etch'' - ''writer:Flemming''
*[[/Wet Aluminium Etch|Wet Aluminium Etch]]
*[[/Wet Aluminium Etch|Wet Aluminium Etch]]

Revision as of 09:55, 15 January 2008

Wet etch or dry etch

Etching at Danchip can be done either with wet chemistry or in dry etch equipment. In general wet chemistry etches isotropically in most materials were as dry etch techniques can be optimized to transfer a given mask pattern with vertical sidewalls (anisotropically) to a given substrate.


Advantages of wet chemistry over dry etch techniques are:

  • A often high etch rate difference of different materials giving raise to a high selectivity of the material to be etched compared to underlaying layers or mask materials.
  • Time saving: You can often etch 25 wafers at a time in wet chemistry where as dry etch equipment can only handle one wafer at a time.
  • High flexibility with regards to ...

Advantages of dry etch over wet chemistry:

  • Anisotropic etch can be done.
  • The etch do not attach the backside of the sample.

Choose material to be etched

Choose a dry etch equipment

Choose a wet etch