Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions

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Etching of chromium is done wet at Danchip. We have two solution for this:
Etching of chromium is done wet at Danchip. We have two solution for this:


# H<math>NO_3</math>:H<math>_2</math>O:cerisulphate  90ml:1200ml:15g
# HNO<math>_3</math>:H<math>_2</math>O:cerisulphate  - 90ml:1200ml:15g
# Commercial chromium etch


Etch rate 400-1000 Å/min (depending on the level of oxidation of the metal)
Etch rate 400-1000 Å/min (depending on the level of oxidation of the metal)
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|-
|-
|Chemical solution
|Chemical solution
|H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2
|HNO<math>_3</math>:H<math>_2</math>O:cerisulphate - 90ml:1200ml:15g
|PES 77-19-04
|Commercial chromium etch
|-
|-
|Process temperature
|Process temperature
|50 <sup>o</sup>C
|Room temperature


|20 <sup>o</sup>C
|Room temperature


|-
|-

Revision as of 10:36, 15 January 2008

Etching of Chromium

Etching of chromium is done wet at Danchip. We have two solution for this:

  1. HNO:HO:cerisulphate - 90ml:1200ml:15g
  2. Commercial chromium etch

Etch rate 400-1000 Å/min (depending on the level of oxidation of the metal)


Chromium etch 1 Chromium etch 2
General description

Etch of chromium

Etch of chronium

Chemical solution HNO:HO:cerisulphate - 90ml:1200ml:15g Commercial chromium etch
Process temperature Room temperature Room temperature
Possible masking materials:

Photoresist (1.5 µm AZ5214E)

Photoresist (1.5 µm AZ5214E)

Etch rate

~100 nm/min (Pure Al)

~60(??) nm/min

Batch size

1-25 wafers at a time

1-25 wafer at a time

Size of substrate

4" wafers

4" wafers

Allowed materials
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist