Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions
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Etching of chromium is done wet at Danchip. We have two solution for this: | Etching of chromium is done wet at Danchip. We have two solution for this: | ||
# | # HNO<math>_3</math>:H<math>_2</math>O:cerisulphate - 90ml:1200ml:15g | ||
# Commercial chromium etch | |||
Etch rate 400-1000 Å/min (depending on the level of oxidation of the metal) | Etch rate 400-1000 Å/min (depending on the level of oxidation of the metal) | ||
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|- | |- | ||
|Chemical solution | |Chemical solution | ||
| | |HNO<math>_3</math>:H<math>_2</math>O:cerisulphate - 90ml:1200ml:15g | ||
| | |Commercial chromium etch | ||
|- | |- | ||
|Process temperature | |Process temperature | ||
| | |Room temperature | ||
| | |Room temperature | ||
|- | |- |
Revision as of 09:36, 15 January 2008
Etching of Chromium
Etching of chromium is done wet at Danchip. We have two solution for this:
- HNO:HO:cerisulphate - 90ml:1200ml:15g
- Commercial chromium etch
Etch rate 400-1000 Å/min (depending on the level of oxidation of the metal)
Chromium etch 1 | Chromium etch 2 | |
---|---|---|
General description |
Etch of chromium |
Etch of chronium |
Chemical solution | HNO:HO:cerisulphate - 90ml:1200ml:15g | Commercial chromium etch |
Process temperature | Room temperature | Room temperature |
Possible masking materials: |
Photoresist (1.5 µm AZ5214E) |
Photoresist (1.5 µm AZ5214E) |
Etch rate |
~100 nm/min (Pure Al) |
~60(??) nm/min |
Batch size |
1-25 wafers at a time |
1-25 wafer at a time |
Size of substrate |
4" wafers |
4" wafers |
Allowed materials |
|
|