Specific Process Knowledge/Thin film deposition/MVD: Difference between revisions

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*Spin coating and soft baking UV sensative resists
*FDTS coating of Si or SiO2 surfaces
*Spin coating SU8 resists
*Indirect O2 plasma treatment
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!style="background:silver; color:black;" align="center" width="60"|Resist
!style="background:silver; color:black;" align="center" width="60"|Vapor sources
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|style="background:LightGrey; color:black"|Line
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*1
* AZ5214E permanent line
*2
* AZ4562 manual dispense
*3
* SU8 resists manual dispense
*4
|style="background:WhiteSmoke; color:black"|Chemical
*Water
*FDTS (new source)
*FDTS (old source, contaminated line)
*Available (line probably contaminated)
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!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
|style="background:LightGrey; color:black"|Coating thickness
|style="background:LightGrey; color:black"|Contact angle
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* AZ5214E 1-4,2 µm
110° (water)
* AZ4526 6,2-10 µm
* SU8 resits 0,1-100 µm
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameters
|style="background:LightGrey; color:black"|Spin speed
|style="background:LightGrey; color:black"|Chamber temperature
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100 - 5000 rpm
35°C
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|style="background:LightGrey; color:black"|Spin acceleration
|style="background:LightGrey; color:black"|Chamber volume
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100 - 5000 rpm/s
Approx. 3 liters
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|style="background:LightGrey; color:black"|Hotplate temperature
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* changeable temperature from 20° to 200°
* SU8 must be bake out on SU8 dedicated hotplates
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Substrate size
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* 50 mm wafers
1" to 8"
* 100 mm wafers
* 150 mm wafers
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| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
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|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
All cleanroom materials except III-V materials
All cleanroom materials
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|style="background:LightGrey; color:black"|Batch
|style="background:LightGrey; color:black"|Batch
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|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
1  
1 sample at a time
 
2 (possibly 4) 4" or 6" wafers may be processed simultaneously using cassettes
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Revision as of 11:00, 20 January 2014

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The Molecular Vapor Deposition tool

The MVD is located in cleanroom 1

The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At Danchip the MVD is an essential tool for nanoimprint lithography.

The user manual, user APV, and contact information can be found in LabManager

Process information

Equipment performance and process related parameters

Purpose
  • FDTS coating of Si or SiO2 surfaces
  • Indirect O2 plasma treatment
Vapor sources Line
  • 1
  • 2
  • 3
  • 4
Chemical
  • Water
  • FDTS (new source)
  • FDTS (old source, contaminated line)
  • Available (line probably contaminated)
Performance Contact angle

110° (water)

Process parameters Chamber temperature

35°C

Chamber volume

Approx. 3 liters

Substrates Substrate size

1" to 8"

Allowed materials

All cleanroom materials

Batch

1 sample at a time

2 (possibly 4) 4" or 6" wafers may be processed simultaneously using cassettes