Specific Process Knowledge/Thin film deposition/MVD: Difference between revisions

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[[image:Mvd.jpg|200x200px|right|thumb|The MVD is located in cleanroom 1]]
[[image:Mvd.jpg|200x200px|right|thumb|The MVD is located in cleanroom 1]]


The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At Danchip the MVD is essential for nanoimprint lithography.
The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At Danchip the MVD is an essential tool for nanoimprint lithography.


'''The user manual, user APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=313 LabManager]'''
'''The user manual, user APV, and contact information can be found in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=199 LabManager]'''


===Process information===
===Process information===

Revision as of 10:23, 20 January 2014

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The Molecular Vapor Deposition tool

The MVD is located in cleanroom 1

The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At Danchip the MVD is an essential tool for nanoimprint lithography.

The user manual, user APV, and contact information can be found in LabManager

Process information

Equipment performance and process related parameters

Purpose
  • Spin coating and soft baking UV sensative resists
  • Spin coating SU8 resists
Resist
  • AZ5214E permanent line
  • AZ4562 manual dispense
  • SU8 resists manual dispense
Performance Coating thickness
  • AZ5214E 1-4,2 µm
  • AZ4526 6,2-10 µm
  • SU8 resits 0,1-100 µm
Process parameters Spin speed

100 - 5000 rpm

Spin acceleration

100 - 5000 rpm/s

Hotplate temperature
  • changeable temperature from 20° to 200°
  • SU8 must be bake out on SU8 dedicated hotplates
Substrates Substrate size
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

All cleanroom materials except III-V materials

Batch

1