Specific Process Knowledge/Etch: Difference between revisions

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[[/Deposition of Silicon Nitride|Silicon Nitride]] - ''and oxynitride'' <br/>
*[[/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]]
[[/Deposition of Silicon Oxide|Silicon Oxide]]<br/>
*[[/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]]
[[/Deposition of Titanium Oxide|Titanium Oxide]]<br/>
*[[/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]]
*[[/DRIE-Pegasus|DRIE-Pegasus (Silicon Etch)]]
*[[/ICP Metal Etcher|ICP Metal Etch]]
*[[/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
*[[/Comparison|Comparison of the dry etch systems at Danchip]]
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[[/Deposition of Silicon|Silicon]]
*[[/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
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*[[/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]]
[[/Deposition of Aluminium|Aluminium]] <br/>
*[[/KOH Etch|KOH Etch]] - ''Anisotropic silicon etch''
[[/Deposition of Titanium|Titanium]]<br/>
*[[/Wet Polysilicon Etch|Wet Polysilicon Etch]] - ''Isotropic silicon etch''
[[/Deposition of Chromium|Chromium]]<br/>
*[[/Wet Aluminium Etch|Wet Aluminium Etch]]
[[/Deposition of Nickel|Nickel]]<br/>
*[[/Wet Chromium Etch|Wet Chromium Etch]]
[[/Deposition of Copper|Copper]]<br/>
*[[/Wet Titanium Etch|Wet Titanium Etch]]
[[/Deposition of Germanium|Germanium]]<br/>
*[[/Wet Gold Etch|Wet Gold Etch]]
[[/Deposition of Molybdenum|Molybdenum]]<br/>
*[[/Wet Platinum Etch|Wet Platinum Etch]]
[[/Deposition of Palladium|Palladium]]<br/>
[[/Deposition of Silver|Silver]]<br/>
[[/Deposition of Tin|Tin]]<br/>
[[/Deposition of Tantalum|Tantalum]]<br/>
[[/Deposition of Tungsten|Tungsten]]<br/>
[[/Deposition of Platinum|Platinum]]<br/>
[[/Deposition of Gold|Gold]]<br/>
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[[/Deposition of TiW|TiW]] alloy (10%/90% by weight) <br/>
[[/Deposition of NiCr|NiCr]] alloy  <br/>
[[/Deposition of AlTi|AlTi]] alloy
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[[Specific Process Knowledge/Photolithography/SU8|SU8]]<br/>
Antistiction coating <br/>
Topas <br/>
PMMA
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Revision as of 15:31, 14 October 2013

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Wet etch or dry etch

Etching at Danchip can be done either with wet chemistry or in dry etch equipment. In general wet chemistry etches isotropically in most materials were as dry etch techniques can be optimized to transfer a given mask pattern with vertical sidewalls (anisotropically) to a given substrate.

Advantages of wet chemistry over dry etch techniques are:

  • An often high etch rate difference of different materials giving raise to a high selectivity of the material to be etched compared to underlaying layers or mask materials.
  • Time saving: You can often etch 25 wafers at a time in wet chemistry where as dry etch equipment can only handle one wafer at a time.
  • Easy to start up new etch solutions.

Advantages of dry etch over wet chemistry:

  • Anisotropic etch can be done.
  • The etch does not attach the backside of the sample.

Choose material to be etched

Choose a dry etch equipment

Choose a wet etch

Section under construction

A Dry Etch Equipment A Wet Etch