Specific Process Knowledge/Etch/Etching of Bulk Glass/AOE etching of fused silica: Difference between revisions
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!AZ resist mask | !AZ resist mask | ||
!PolySi mask | !PolySi mask | ||
!Cr mask [[Image:section under construction.jpg|70px]] | |||
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|Using a photoresist mask as etching mask is often convenient, since it takes less process steps to make than hard masks. The draw backs using resist as masking material in the AOE on glass is that glass does not transfer heat well and therefore the He cooling in the AOE does not work well on glass substrates. This makes the photoresist turn very hot during the etch and that might burn the resist. Resist also has low selectivity to glass so deep glass etch is not working well with photoresist as masking material. | |Using a photoresist mask as etching mask is often convenient, since it takes less process steps to make than hard masks. The draw backs using resist as masking material in the AOE on glass is that glass does not transfer heat well and therefore the He cooling in the AOE does not work well on glass substrates. This makes the photoresist turn very hot during the etch and that might burn the resist. Resist also has low selectivity to glass so deep glass etch is not working well with photoresist as masking material. | ||
|Using Poly Silicon as masking material in the AOE has the advantage over photoresist in the fact that the mask can stand a higher temperature. Then a recipe with higher etch can be used. It also as a higher selectivity so it is possible to etch deeper.The draw back might be higher line width reduction but this has not been expored yet. | |Using Poly Silicon as masking material in the AOE has the advantage over photoresist in the fact that the mask can stand a higher temperature. Then a recipe with higher etch can be used. It also as a higher selectivity so it is possible to etch deeper.The draw back might be higher line width reduction but this has not been expored yet. | ||
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*PolySi | *PolySi | ||
*2µm | *2µm | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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*1300 W | *1300 W | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
|''Platen Power'' | |''Platen Power'' | ||
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*500 W | *500 W | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|''Platen temperature'' | |''Platen temperature'' | ||
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*60<sup>o</sup>C | *60<sup>o</sup>C | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
|''He flow'' | |''He flow'' | ||
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*300 sccm | *300 sccm | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|''C<sub>4</sub>F<sub>8</sub> flow'' | |''C<sub>4</sub>F<sub>8</sub> flow'' | ||
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*18 sccm | *18 sccm | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
|''H<sub>2</sub> flow'' | |''H<sub>2</sub> flow'' | ||
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*0 sccm | *0 sccm | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|''Pressure'' | |''Pressure'' | ||
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*4 mTorr | *4 mTorr | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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*448.6±0.6nm/min @40min etch (2013-3-26) | *448.6±0.6nm/min @40min etch (2013-3-26) | ||
± refers to the variation over the wafer. | ± refers to the variation over the wafer. | ||
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*~1:16 (2013-03-26) | *~1:16 (2013-03-26) | ||
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*100 mm wafer | *100 mm wafer | ||
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Revision as of 10:46, 3 September 2013
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Comparison of masking materials and AOE processes etching fused silica