Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE: Difference between revisions
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|Etch rate [nm/min] | |Etch rate [nm/min] | ||
|500 | |500 | ||
| | |. | ||
|300 | |300 | ||
|280 | |280 | ||
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|Selectivity [:1] | |Selectivity [:1] | ||
|20 | |20 | ||
| | |. | ||
|4 | |4 | ||
|3.2 | |3.2 | ||
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|Profile [<sup>o</sup>] | |Profile [<sup>o</sup>] | ||
|>88 | |>88 | ||
| | |. | ||
|>88 | |>88 | ||
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|- | |- | ||
|} | |} |
Revision as of 09:49, 25 April 2008
Because the AOE is owned by Hymite and the status of the future accessibility to this equipment is unknown - DANCHIP has not reserved much time to check and develop processes on the AOE.
Etching of micro structures in Silicon Oxide with photoresist or (poly)silicon as masking material
Parameter | Si mask | Resist mask |
---|---|---|
Coil Power [W] | 1300 | 1000 |
Platen Power [W] | 500 | 300 |
Platen temperature [oC] | 35 | 0 |
He flow [sccm] | 300 | 174 |
CF flow [sccm] | 18 | 10 |
H flow [sccm] | 0 | 8 |
Pressure [mTorr] | 4 | 4 |
Typical results | Si mask non-confirmed result | Si mask DANCHIP result | Resist mask non-confirmed result | Resist mask DANCHIP result |
---|---|---|---|---|
Etch rate [nm/min] | 500 | . | 300 | 280 |
Selectivity [:1] | 20 | . | 4 | 3.2 |
Profile [o] | >88 | . | >88 | . |
Etching of micro structures in Silicon Oxide with Aluminium as masking material
Parameter | Al mask |
---|---|
Coil Power [W] | 1800 |
Platen Power [W] | 180 |
Platen temperature [oC] | 35 |
CF flow [sccm] | 80 |
O flow [sccm] | 10 |
Pressure [mTorr] | 6 |
Typical results | Al mask non-confirmed result | Al mask DANCHIP result |
---|---|---|
Etch rate [nm/min] | >500 | |
Selectivity [:1] | >50 | |
Profile [o] | >88 |
Etching of sub-micro structures (trenches or holes) in Silicon Oxide with (poly)silicon or Aluminium as masking material
Parameter | Si mask | Al mask | Very thin Al mask |
---|---|---|---|
Coil Power [W] | 1600 | 1100 | 2000 |
Platen Power [W] | 200 | 500 | 140 |
Platen temperature [oC] | 0 | 35 | 35 |
He flow [sccm] | 300 | 50 | 60 |
CF flow [sccm] | 6 | 26 | 29 |
H flow [sccm] | 18 | 0 | 0 |
O flow [sccm] | 0 | 0 | 16 |
Pressure [mTorr] | 4 | 8 | 3 |
Typical results | Si mask non-confirmed result | Si mask DANCHIP result | Al mask non-confirmed result | Al mask DANCHIP result | Thin Al mask non-confirmed result | Thin Al mask DANCHIP result |
---|---|---|---|---|---|---|
Etch rate [nm/min] | 200 | 275 | ||||
Selectivity [:1] | 11 | >50 | Should be larger than for the other Al mask recipe | |||
Profile [o] | 86 | 90 | 90 |