Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/AOE_(Advanced_Oxide_Etch)/Silicon_Nitride_Etch_using_AOE click here]'''
==Silicon nitride - fast - with resist mask==
{| border="2" cellspacing="2" cellpadding="3"  
{| border="2" cellspacing="2" cellpadding="3"  
!Parameter
!Parameter
!SiN_etch
|Recipe name: '''SiN_res''' ('''SiN''' etch with '''res'''ist mask)
 
|-
|Coil Power [W]
|1300
 
|-
|Platen Power [W]
|350
 
|-
|Platen temperature [<sup>o</sup>C]
|0
 
|-
|He flow [sccm]
|174
 
|-
|CF<sub>4</sub> flow [sccm]
|40
 
|-
|Pressure [mTorr]
|4
 
|-
|}
 
{| border="2" cellspacing="2" cellpadding="3"
!Typical results
!Test Results
 
|-
|Etch of Si3N4 with DUV mask
|[[/Nitride etch with DUV mask#Silicon nitride etch with STS recommended silicon nitride recipe|See images here]]
|-
|Etch rate of Si3N4
|'''~435nm/min (50% etch load) ''Marts 2016 by bghe@nanolab'' '''
 
|-
|Etch rate of Silicon
|'''~264nm/min (50% etch load) ''Marts 2016 by bghe@nanolab'''''
 
|-
|Etch rate of DUV resist]
|'''~600nm/min (50% etch load) ''Marts 2016 by bghe@nanolab'''''
 
 
 
|-
|Profile [<sup>o</sup>]
|close to 90 degrees see the images
|-
|}
 
<br clear="all" />
 
==Small variation of the Silicon nitride etch SiN_res - with Cr mask==
''Done by Anders Simonsen @nbi.dk''
 
{| border="2" cellspacing="2" cellpadding="3"
!Parameter
|Recipe name: '''SiN_AS'''
 
|-
|Coil Power [W]
|1300
 
|-
|Platen Power [W]
|350
 
|-
|Platen temperature [<sup>o</sup>C]
|5
 
|-
|He flow [sccm]
|174
 
|-
|CF<sub>4</sub> flow [sccm]
|40
|-
|O2 flow [sccm]
|4
|-
|Pressure [mTorr]
|4
 
|-
|}
 
{| border="2" cellspacing="2" cellpadding="3"
!Typical results
!Test Results
 
|-
|Etch of Si3N4 with Cr mask
|See results here:
* [[:File:report_summer2022 Anders Simonsen bghe edits.pdf | Cr etch development and silicon nitride report summery by Anders Simonesen, summer of 2022 ]]
* [[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium/Cr etch data from AS |Here are the raw test data and SEM images from Anders Simonsen]]
 
|-
|Etch rate of Si3N4
|'''~420 nm/min ''Summer 2022 by asimonsen@nbi.ku'' '''
 
|-
|Etch rate of Cr
|'''1:17''', see discussion in the summery
 
|-
|Profile [<sup>o</sup>]
|close to 90 degrees see the images in the links
|-
|}
 
<br clear="all" />
 
==Silicon nitride etch with the standard silicon oxide etch==
The standard recipe for oxide etching with photo resist as masking material is called: SiO2_res. It can also be used for nitride etching. The parameters and results so fare are as follows:
 
 
{| border="2" cellspacing="2" cellpadding="3"
!Parameter
|Recipe name: '''SiO2_res''' ('''SiO2''' etch with '''res'''ist mask)
 
|-
|Coil Power [W]
|1300
 
|-
|Platen Power [W]
|200
 
|-
|Platen temperature [<sup>o</sup>C]
|0
 
|-
|He flow [sccm]
|174
 
|-
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|5
 
|-
|H<sub>2</sub> flow [sccm]
|4
 
|-
|Pressure [mTorr]
|4
 
|-
|}
 
 
{| border="2" cellspacing="2" cellpadding="3"
!Typical results
!Test Results
|-
|Etch rate of Silicon rich nitride from furnace B2
|136nm was etched in 1min (whole wafer) - etched in October 2015 by ''bghe@nanolab''
|-
|Etch of Si3N4 with DUV mask
|[[/Nitride etch with DUV mask#Silicon nitride etch with the standard silicon oxide etch|See images here]]
 
 
|-
|Etch rate of thermal oxide
|'''~230nm/min (5% etch load)'''
 
|-
|Selectivity SiO2 to AZ resist [:1]
|'''~3'''
 
|-
|Selectivity SiO2 to DUV resist [:1]
|'''~2.0''' - tested May 2013 by Christian Østergaard @nanotech.
 
|-
|Profile [<sup>o</sup>]
|'''~90'''
|-
|}
 
<br clear="all" />
 
==Silicon nitride etch with lower etch rate==
Test of etch in silicon nitride (LPCVD). 105nm nitride had to be removed - it was removed after 1min and 40s with a very small over etch in Si.
 
{| border="2" cellspacing="2" cellpadding="3"
!Parameter
|Recipe name: '''Nitr_res''' (Silicon '''Nitr'''ide etch using '''res'''ist mask)
|-
|-
|Coil Power [W]
|Coil Power [W]
Line 29: Line 228:
{| border="2" cellspacing="2" cellpadding="3"
{| border="2" cellspacing="2" cellpadding="3"
!Typical results
!Typical results
! Resist mask
! Resist mask
! Resist mask
|-
|-
|Silicon nitride (LPCVD) etch rate  
|Silicon nitride (LPCVD) etch rate  
|~60 nm/min     
|~60 nm/min
|99-108 nm/min (LN/BGHE 20130514)    
|-
|-
|Selectivity to photo resist [:1]
|Selectivity to photo resist [:1]
|?  
|?  
|~between 2.5 and 4.0 (LN/BGHE 20130512) 
|-
|-
|Etch rate in Si
|Etch rate in Si
|?
|?
|?
|-
|-
|Etch rate in SiO2  
|Etch rate in SiO2  
|?  
|?  
|? 
|-
|-
|Profile [<sup>o</sup>]
|Profile [<sup>o</sup>]
|not tested
|not tested
|not tested
|-
|-
|Etch uniforminty over a wafer [<sup>o</sup>]
|not tested
|&plusmn; 1.1% to &plusmn;1.8% (Eric Jensen @nanotech, oct. 2013)
|-
|Images
|Images
|.
|.
|.
|-
|-
|Comments
|Comments
|.
|.
|.
|-
|-
|}
|}

Latest revision as of 17:46, 20 December 2022

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Silicon nitride - fast - with resist mask

Parameter Recipe name: SiN_res (SiN etch with resist mask)
Coil Power [W] 1300
Platen Power [W] 350
Platen temperature [oC] 0
He flow [sccm] 174
CF4 flow [sccm] 40
Pressure [mTorr] 4
Typical results Test Results
Etch of Si3N4 with DUV mask See images here
Etch rate of Si3N4 ~435nm/min (50% etch load) Marts 2016 by bghe@nanolab
Etch rate of Silicon ~264nm/min (50% etch load) Marts 2016 by bghe@nanolab
Etch rate of DUV resist] ~600nm/min (50% etch load) Marts 2016 by bghe@nanolab


Profile [o] close to 90 degrees see the images


Small variation of the Silicon nitride etch SiN_res - with Cr mask

Done by Anders Simonsen @nbi.dk

Parameter Recipe name: SiN_AS
Coil Power [W] 1300
Platen Power [W] 350
Platen temperature [oC] 5
He flow [sccm] 174
CF4 flow [sccm] 40
O2 flow [sccm] 4
Pressure [mTorr] 4
Typical results Test Results
Etch of Si3N4 with Cr mask See results here:
Etch rate of Si3N4 ~420 nm/min Summer 2022 by asimonsen@nbi.ku
Etch rate of Cr 1:17, see discussion in the summery
Profile [o] close to 90 degrees see the images in the links


Silicon nitride etch with the standard silicon oxide etch

The standard recipe for oxide etching with photo resist as masking material is called: SiO2_res. It can also be used for nitride etching. The parameters and results so fare are as follows:


Parameter Recipe name: SiO2_res (SiO2 etch with resist mask)
Coil Power [W] 1300
Platen Power [W] 200
Platen temperature [oC] 0
He flow [sccm] 174
C4F8 flow [sccm] 5
H2 flow [sccm] 4
Pressure [mTorr] 4


Typical results Test Results
Etch rate of Silicon rich nitride from furnace B2 136nm was etched in 1min (whole wafer) - etched in October 2015 by bghe@nanolab
Etch of Si3N4 with DUV mask See images here


Etch rate of thermal oxide ~230nm/min (5% etch load)
Selectivity SiO2 to AZ resist [:1] ~3
Selectivity SiO2 to DUV resist [:1] ~2.0 - tested May 2013 by Christian Østergaard @nanotech.
Profile [o] ~90


Silicon nitride etch with lower etch rate

Test of etch in silicon nitride (LPCVD). 105nm nitride had to be removed - it was removed after 1min and 40s with a very small over etch in Si.

Parameter Recipe name: Nitr_res (Silicon Nitride etch using resist mask)
Coil Power [W] 700
Platen Power [W] 100
Platen temperature [oC] 0
CF flow [sccm] 5
He flow [sccm] 174
H flow [sccm] 4
Pressure [mTorr] 4


Typical results Resist mask Resist mask
Silicon nitride (LPCVD) etch rate ~60 nm/min 99-108 nm/min (LN/BGHE 20130514)
Selectivity to photo resist [:1] ? ~between 2.5 and 4.0 (LN/BGHE 20130512)
Etch rate in Si ? ?
Etch rate in SiO2 ? ?
Profile [o] not tested not tested
Etch uniforminty over a wafer [o] not tested ± 1.1% to ±1.8% (Eric Jensen @nanotech, oct. 2013)
Images . .
Comments . .
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