Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum: Difference between revisions

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-Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Molybdenum click here]'''
+<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
+== Molybdenum deposition ==
+Molybdenum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.
+==Sputtering of Molybdenum==
+Molybdenum may be sputter deposited in either the single-chamber sputter-system ("Sputter System Lesker") or the cluster-based sputter system ("[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-System Metal-Oxide(PC1)]]" and "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-System Metal-Nitride(PC3)]]"). See more in link here and the chart below.
+*[[Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum/Mo Sputtering in Cluster Lesker PC1|Mo Sputtering in Sputter-System Metal-Oxide(PC1)]]
 {| border="1" cellspacing="0" cellpadding="4"
+|-style="background:silver; color:black"
 !
-! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
+! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
+! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
+! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
 |-
-| Batch size
+|-style="background:WhiteSmoke; color:black"
+! General description
+| E-beam deposition of Mo
+(line-of-sight deposition)
+| Sputter deposition of Mo
+(not line-of-sight)
+| Sputter deposition of Mo
+(not line-of-sight)
+|-
+|-style="background:LightGrey; color:black"
+! Pre-clean
+|Ar ion source
 |
-*Up to 1x4" wafers
+|RF Ar clean
-*smaller pieces
 |-
-| Pre-clean
+|-style="background:WhiteSmoke; color:black"
-|RF Ar clean
+! Layer thickness
+|10Å to 600 nm *
+|10Å to 500 Å
+|10Å to at least 100 nm (discuss with staff)
 |-
-| Layer thickness
+|-style="background:LightGrey; color:black"
-|10Å to 1µm
+! Deposition rate
+| 1Å/s to 10Å/s
+| Depends on process parameters, roughly about 1 Å/s
+| At least up to 4 Å/s. See process log.
 |-
-| Deposition rate
-|2Å/s to 15Å/s
 |-
+|-style="background:WhiteSmoke; color:black"
+! Batch size
+|
+*Up to 4x6" wafers
+*Up to 3x8" wafers (ask for holder)
+*Many smaller pieces
+|
+* Pieces or
+* 1x4" wafer or
+* 1x6" wafer
+|
+*Up to 10x4" or 6" wafers
+*Many smaller pieces
+|-
+|-style="background:LightGrey; color:black"
+!Allowed materials
+|
+* Silicon
+*Silicon oxide
+*Silicon (oxy)nitride
+*Photoresist
+*PMMA
+*Mylar
+*Metals
+*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
+|
+* Silicon
+* Silicon oxide
+* Silicon nitride
+* Silicon (oxy)nitride
+* Photoresist
+* PMMA
+* Mylar
+* SU-8
+|
+Almost any as long as it does not outgas.
+|-style="background:WhiteSmoke; color:black"
+! Comment
+|
+| Sputter target size 2".
+| Sputter target size 3-4" (usually 3"). So far (June 2025) Mo has been deposited in PC1. See process log for details.
+|-
 |}
+'''*'''  ''Please send a request to us if you wish to deposit more than 600 nm (write to metal@nanolab.dtu.dk)''