Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions
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Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering. | Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering. | ||
==Thermal | ==Resistive Thermal evaporation== | ||
* [[/Thermal Ge deposition Wordentec|Thermal deposition of Ge in Wordentec]] | * [[/Thermal Ge deposition Wordentec|Thermal deposition of Ge in Wordentec]] | ||
* [[/Thermal Ge evaporation Thermal Evaporator|Resistive thermal evaporation of Ge in Thermal Evaporator - Lesker]] | |||
==Ge deposition equipment comparison== | ==Ge deposition equipment comparison== | ||
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! | ! | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | |||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputtering ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! General description | ! General description | ||
|Thermal deposition of Ge | |||
|Thermal deposition of Ge | |Thermal deposition of Ge | ||
|E-beam deposition of Ge | |E-beam deposition of Ge | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
|none | |||
|none | |none | ||
|Ar ion etch (only in E-beam evaporator Temescal) | |Ar ion etch (only in E-beam evaporator Temescal) | ||
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! Layer thickness | ! Layer thickness | ||
|10 Å to about 2000 Å (in total distributed on all loaded wafers) | |10 Å to about 2000 Å (in total distributed on all loaded wafers) | ||
|10 Å to about 2000 Å | |||
|few nm to about 1 µm* | |few nm to about 1 µm* | ||
|10 Å to at least 1000 Å | |10 Å to at least 1000 Å | ||
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! Deposition rate | ! Deposition rate | ||
|0.4 Å/s - ~ 2 Å/s | |0.4 Å/s - ~ 2 Å/s | ||
|1 Å/s | |||
|1 Å/s - 5 Å/s | |1 Å/s - 5 Å/s | ||
|Depends on deposition parameters | |Depends on deposition parameters | ||
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*6x 4" wafers or | *6x 4" wafers or | ||
*6x 6" wafers or | *6x 6" wafers or | ||
Many small pieces | |||
| | |||
*4x 2" wafers or | |||
*3x 4" wafers or | |||
*1x 6" wafers or | |||
*1x 8" wafers or | |||
Many small pieces | Many small pieces | ||
| | | | ||
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! Allowed materials | ! Allowed materials | ||
| | |||
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet]. | |||
| | | | ||
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet]. | Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet]. | ||
Latest revision as of 16:15, 7 February 2024
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All text by DTU Nanolab staff
Deposition of Germanium
Germanium can be deposited by thermal evaporation, e-beam evaporation, and sputtering.
Resistive Thermal evaporation
Ge deposition equipment comparison
| Thermal evaporation (Wordentec) | Thermal evaporation (Thermal Evaporator) | E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) | Sputtering (Lesker) | Sputtering (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
|---|---|---|---|---|---|
| General description | Thermal deposition of Ge | Thermal deposition of Ge | E-beam deposition of Ge | Sputter deposition of Ge | Sputter deposition of Ge |
| Pre-clean | none | none | Ar ion etch (only in E-beam evaporator Temescal) | RF Ar clean | RF Ar clean |
| Layer thickness | 10 Å to about 2000 Å (in total distributed on all loaded wafers) | 10 Å to about 2000 Å | few nm to about 1 µm* | 10 Å to at least 1000 Å | 10 Å to ? |
| Deposition rate | 0.4 Å/s - ~ 2 Å/s | 1 Å/s | 1 Å/s - 5 Å/s | Depends on deposition parameters | Depends on deposition parameters |
| Batch size |
Many small pieces |
Many small pieces |
|
smaller pieces |
|
| Allowed materials |
Almost any that does not degas. See the cross-contamination sheet. |
Almost any that does not degas. See the cross-contamination sheet. |
Almost any that does not degas at your intended substrate temperature. See the cross-contamination sheet. |
|
* For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough material present in the machine.