Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]''' | ||
===As the system is not being used for deposition this information is no long relevant=== | |||
It is being keep in case we will start up the depostion again.<br> | |||
<!-- [[Image:Tooling_factor.jpg|700px|right|thumb|How to calculate the tooling factor. Taken from the manufacture manual]] --> | <!-- [[Image:Tooling_factor.jpg|700px|right|thumb|How to calculate the tooling factor. Taken from the manufacture manual]] --> |
Latest revision as of 13:58, 22 June 2023
Feedback to this page: click here
As the system is not being used for deposition this information is no long relevant
It is being keep in case we will start up the depostion again.
Material parameters for using the crystal monitors | |||||
Material | Density | Z ratio | |||
---|---|---|---|---|---|
TiO2 | 4.260 | 0.400 | |||
SiO2 | 2.648 | 1.000 | |||
Si | 2.320 | 0.712 |
Settings for Crystal thickness monitor 1 | |||||
Date | Tooling factor: TiO2 | Tooling factor: SiO2 | Tooling factor: Si | ||
---|---|---|---|---|---|
2014-07-22 | 157.3% (wafer center) | ||||
2015-09-08 | 132 % | B2 | B3 | ||
C | C1 | C2 | C3 | ||
D | D1 | D2 | D3 |
Settings for crystal thickness monitor 2 | |||||
Date | Tooling factor: TiO2 | Tooling factor: SiO2 | Tooling factor: Si | ||
---|---|---|---|---|---|
A | A1 | A2 | A3 | ||
B | B1 | B2 | B3 | ||
C | C1 | C2 | C3 | ||
D | D1 | D2 | D3 |