Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions

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-'''Feedback to this page''': '''[mailto:pvd@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tungsten&action=edit click here]'''
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tungsten click here]'''
-= Tungsten deposition =
+<i> This page is written by <b>DTU Nanolab staff</b></i>
-Tungsten (W) can be deposited by e-beam evaporation and sputtering. However, in case of evaporation the precess generates a lot of heat (despite water cooling), and this means the pressure rises as the chamber is baking out. It is therefore not easy to deposit films much thicker than 50-60 nm. In the Temescal we stopped the deposition every 20 nm to let the pressure drop. Also, the rate needs to be low, to avoid overheating. Talk to staff when you want to deposit W (write to thinfilm@nanolab.dtu.dk). Sputtering can be used without any sufficient issues. In the chart below you can compare the deposition equipment.
+=Tungsten (W)=
-==Evaporation of W==
+Tungsten (W) is a refractory metal with the highest melting point of any element, remarkable density, hardness, and outstanding resistance to radiation and corrosion, making it indispensable in semiconductor, optical, and harsh‑environment technologies.
+Thin films are produced primarily by magnetron sputtering or e-beam evaporation, yielding dense, low-resistivity body-centered-cubic α-W when pressure, substrate temperature, and energy are adequately controlled.
+Within semiconductor process flows, α‑W serves as a robust diffusion‑barrier/liner, gate or contact metal, and reliable via/plug fill for logic, memory, and power devices operating at elevated temperatures.
+In optics, the metal’s high atomic number and thermal stability underpin multilayer W/Si or W/C stacks used in X‑ray mirrors—such as Göbel mirrors, Kirkpatrick–Baez optics, synchrotron beamline monochromators, and space‑borne telescope coatings—delivering high reflectivity and power‑handling in the soft-to-hard-X-ray range.
+α‑W also supports high‑temperature plasmonic and thermally emissive coatings, mid‑IR absorbers, and durable metamaterial surfaces that endure far greater power densities than noble metals.
+Beyond electronics and photonics, tungsten’s mechanical strength and radiation tolerance enable MEMS springs, X‑ray/EUV shielding, high‑temperature sensors, and dense protective components; moreover, α‑W becomes superconducting at millikelvin temperatures, allowing niche low‑loss microwave resonators and detector elements where extreme stability is required.
+== Tungsten deposition ==
+Tungsten (W) can be deposited by e-beam evaporation and sputtering. However, in the case of evaporation, the process generates a lot of heat, so it is not easy to deposit films much thicker than 50-60 nm. Sputtering can be used without any particular issues. In the chart below, you can compare the deposition equipment.
+===Evaporation of W===
 *[[/Evaporation of W in Temescal|E-beam evaporation of Tungsten in the Temescal]]
-==Sputtering of W==
+===Sputtering of W===
 *[[/Sputtering of W in Sputter Coater 3|Sputtering of Tungsten in the Sputter Coater 3]]