Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Ti etch: Difference between revisions

@@ Line 1: / Line 1: @@
 '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch click here]'''
+<br> {{CC-bghe1}}
 ==Results from the acceptance test in February 2011==
@@ Line 37: / Line 37: @@
 !style="background:silver; color:black" align="left" valign="top"|Etch depth
 |style="background:WhiteSmoke; color:black"|
-*300nm
+*300nnm
 |
 *~270 nm
@@ Line 45: / Line 45: @@
 *>80 nm/min
 |
-*22 nm/min +- 0.3nm/min (one standard deviation)
+*22 nm/min +- 0.3nnm/min (one standard deviation)
 |-
 !style="background:silver; color:black" align="left" valign="top"|Etch rate uniformity
 |style="background:WhiteSmoke; color:black"|
-*<+-2%
+*<&plusmn;2%
 |
-*+-(0.2% +-0.2%)
+*&plusmn;(0.2% &plusmn;0.2%)
 |-
 !style="background:silver; color:black" align="left" valign="top"|Reproducibility
 |style="background:WhiteSmoke; color:black"|
-*<+-2%
+*<&plusmn;2%
 |
-*+-(0.8% +-0.5%)
+*&plusmn;(0.8% &plusmn;0.5%)
 |-
 !style="background:silver; color:black" align="left" valign="top"|Selectivity (Ti etch rate/ZEP etch rate)