Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of silicon nitride using Lesker sputter system: Difference between revisions
No edit summary |
|||
| (One intermediate revision by the same user not shown) | |||
| Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition%20of%20Silicon%20Nitride/Deposition%20of%20silicon%20nitride%20using%20Lesker%20sputter%20system click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition%20of%20Silicon%20Nitride/Deposition%20of%20silicon%20nitride%20using%20Lesker%20sputter%20system click here]''' | ||
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i> | |||
The [[Specific_Process_Knowledge/Thin_film_deposition/Lesker|sputter-system(Lesker)]] can be use to deposit silicon nitride by reactive sputtering with a gas mixture of Ar and N2, where N2 is the reactive gas. | The [[Specific_Process_Knowledge/Thin_film_deposition/Lesker|sputter-system(Lesker)]] can be use to deposit silicon nitride by reactive sputtering with a gas mixture of Ar and N2, where N2 is the reactive gas. | ||
| Line 26: | Line 27: | ||
|Deposition rate | |Deposition rate | ||
|- | |- | ||
|source 3 DC with nitrogen | |source 3 DC with RF bias and nitrogen | ||
|Si | |Si | ||
|3 | |3 | ||
| Line 36: | Line 37: | ||
|~1.38 nm/min | |~1.38 nm/min | ||
|- | |- | ||
|source 1 DC | |source 1 DC and nitrogen | ||
|Si | |Si | ||
|1 | |1 | ||
| Line 42: | Line 43: | ||
|4 | |4 | ||
|No | |No | ||
|Ar+ | |N2 ratio 45% (Ar:33 sccm + N2: 15 sccm) | ||
|RT | |RT | ||
|~4 | |~4 nm/min | ||
|- | |- | ||
|} | |} | ||
Latest revision as of 11:12, 11 May 2023
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
The sputter-system(Lesker) can be use to deposit silicon nitride by reactive sputtering with a gas mixture of Ar and N2, where N2 is the reactive gas.
We have little experience with this so any information you obtain will be welcome.
Note that it is also possible to deposit SiN by reactive sputtering in the newer Sputter-System Metal-Nitride(PC3) which is a dedicated chamber for metal and nitride deposition where oxygen contamination of the film will be minimized. SiOxNy may be deposited in Sputter-System Metal-Oxide(PC1). These chambers also offer pulsed DC sputtering and HIPIMS (high-power impulse magnetron sputtering).
Recipes on Sputter-System(Lesker) for deposition of silicon nitride
Recipes
The recipe below has been tried in the system. It is possible to change many of the parameters.
| Recipe name | Target | Gun | Power [W] | Pressure [mTorr] | RF substrate Power [W] | Gas | Temperature | Deposition rate |
| source 3 DC with RF bias and nitrogen | Si | 3 | 90 | 4 | 10 | N2 ratio 45% (Ar:33 sccm + N2: 15 sccm) | RT | ~1.38 nm/min |
| source 1 DC and nitrogen | Si | 1 | 180 | 4 | No | N2 ratio 45% (Ar:33 sccm + N2: 15 sccm) | RT | ~4 nm/min |