Specific Process Knowledge/Thin film deposition/Deposition of ITO: Difference between revisions
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We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here: | We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here: | ||
*[[Specific_Process_Knowledge/Thin_film_deposition/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)|Sputtering of ITO in Sputter-System Metal-Oxide (PC1)]]. | *[[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)|Sputtering of ITO in Sputter-System Metal-Oxide (PC1)]]. | ||
==Comparison of the methods for deposition of ITO== | ==Comparison of the methods for deposition of ITO== | ||
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*Not known | *Not known | ||
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*In:Sn:O ~ 39:3:58 | *In:Sn:O ~ 39:3:58. Can be tuned by altering [[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Stoichiometry|deposition conditions]]. | ||
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* 0.5-2 nm/min | * 0.5-2 nm/min | ||
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* at least up to ~ 10 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/ | * at least up to ~ 10 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Deposition_rate|see conditions]]) | ||
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!Process Temperature | !Process Temperature | ||
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* Up to 400 °C | * Up to 400 °C (tool limit) | ||
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* Up to 600 °C | * Up to 600 °C (tool limit) | ||
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Latest revision as of 10:38, 9 June 2023
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All contents by DTU Nanolab staff.
Deposition of ITO
ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O2.
We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here:
Comparison of the methods for deposition of ITO
Sputter-System(Lesker) | Sputter-System Metal-Oxide(PC1) | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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Substrate size |
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Allowed materials |
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