Specific Process Knowledge/Lithography/UVExposure Dose: Difference between revisions
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#REDIRECT [[Specific Process Knowledge/Lithography/Resist#Exposure_dose]] | |||
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure_Dose click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure_Dose click here]''' | ||
=Exposure dose= | =Exposure dose= | ||
[[Image:AZ spectral sensitivity. | [[Image:AZ photoresists spectral sensitivity - remake v1.png|400x400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption.]] | ||
During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction that makes the resist develop in the developer. In a positive resist, it makes the resist become soluble in the developer. In a negative resist, usually assisted by thermal energy in the post-exposure bake, it makes the resist insoluble in the developer. The amount of light required to fully develop the resist in the development process, is the exposure dose. | During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction that makes the resist develop in the developer. In a positive resist, it makes the resist become soluble in the developer. In a negative resist, usually assisted by thermal energy in the post-exposure bake, it makes the resist insoluble in the developer. The amount of light required to fully develop the resist in the development process, is the exposure dose. | ||
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It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process. | It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process. | ||
SECTION HIDDEN BY TARAN 20-03-2020 | |||
==Comparison: Relative exposure dose== | ==Comparison: Relative exposure dose== | ||
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<sup>1)</sup> Due to a difference in the sensitivity of the power meter used in calibration. | <sup>1)</sup> Due to a difference in the sensitivity of the power meter used in calibration. | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!AZ 5214E<br><span style="color:green">New Japanese version</span> | !AZ 5214E<br><span style="color:green">New Japanese version</span> | ||
| | |2023-01-11<br>jehem | ||
|1.5 µm | |1.5 µm | ||
| | |70 mJ/cm<sup>2</sup> | ||
|Single puddle, 60 s | |Single puddle, 60 s | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!AZ 5214E Image Reversal<br><span style="color:green">New Japanese version</span> | !AZ 5214E Image Reversal<br><span style="color:green">New Japanese version</span> | ||
| | |2023-01-11<br>jehem | ||
|2.2 µm | |2.2 µm | ||
| | |22 mJ/cm<sup>2</sup> | ||
|Single puddle, 60 s | |Single puddle, 60 s | ||
|Image reversal process.<br>Reversal bake: 60s at 110°C.<br>Flood exposure: 500 mJ/cm<sup>2</sup> | |Image reversal process.<br>Reversal bake: 60s at 110°C.<br>Flood exposure: 500 mJ/cm<sup>2</sup> | ||
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'''AZ 5214E image reversal''' | '''AZ 5214E image reversal''' | ||
*1.5 µm resist on boron glass: around 49 mJ/cm<sup>2</sup> (supplied March 2013 by Morten Bo Lindholm Mikkelsen, DTU Nanotech). | *1.5 µm resist on boron glass: around 49 mJ/cm<sup>2</sup> (supplied March 2013 by Morten Bo Lindholm Mikkelsen, DTU Nanotech). | ||
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