Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions
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'''Feedback to this page''': '''[mailto: | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tungsten click here]''' | ||
== Tungsten deposition == | <i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i> | ||
= Tungsten deposition = | |||
Tungsten (W) can be deposited by e-beam evaporation and sputtering. However, in case of evaporation the precess generates a lot of heat (despite water cooling), and this means the pressure rises as the chamber is baking out. It is therefore not easy to deposit films much thicker than 50-60 nm. In the Temescal we stopped the deposition every 20 nm to let the pressure drop. Also, the rate needs to be low, to avoid overheating. Talk to staff when you want to deposit W (write to thinfilm@nanolab.dtu.dk). Sputtering can be used without any sufficient issues. In the chart below you can compare the deposition equipment. | |||
==Evaporation of W== | |||
*[[/Evaporation of W in Temescal|E-beam evaporation of Tungsten in the Temescal]] | |||
==Sputtering of W== | |||
*[[/Sputtering of W in Sputter Coater 3|Sputtering of Tungsten in the Sputter Coater 3]] | |||
*[[/DC Sputtering of W in Sputter-System (Lesker)|DC Sputtering of Tungsten in the Sputter-System (Lesker)]] | |||
*[[/DC Sputtering of W in Sputter-system Metal-Nitride (PC3)|DC Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]] | |||
*[[/HiPIMS Sputtering of W in Sputter-system Metal-Nitride (PC3)|HiPIMS Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)]] | |||
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! Sputter-system ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter-system ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|(Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ]]) | |||
! Sputter coater [[Specific Process Knowledge/Thin film deposition/Sputter coater#Sputter coater 03|(Sputter coater 03)]] | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! General description | ! General description | ||
| E-beam evaporation of W | | E-beam evaporation of W | ||
| Sputtering of W | | DC Sputtering of W | ||
| DC and HiPIMS Sputtering of W | |||
| DC Sputtering of W | |||
|- | |- | ||
|-style="background:Lightgrey; color:black" | |-style="background:Lightgrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
|Ar ion beam | |Ar ion beam | ||
|None | |||
|RF bias on a substrate | |||
|None | |None | ||
|- | |- | ||
| Line 25: | Line 45: | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to | |10Å to 20nm* | ||
|10Å to 600nm | |||
|10Å to 600nm | |10Å to 600nm | ||
|10Å to 250nm | |||
|- | |- | ||
| Line 33: | Line 55: | ||
|0.5 Å/s to 1 Å/s | |0.5 Å/s to 1 Å/s | ||
|about 1 Å/s | |about 1 Å/s | ||
|about 1 Å/s | |||
|configuration dependent | |||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Batch size | ! Batch size | ||
| Line 42: | Line 66: | ||
*Up to 1x4" wafers | *Up to 1x4" wafers | ||
*Up to 1x6" wafer | *Up to 1x6" wafer | ||
*small pieces | |||
| | |||
*Up to 10x4" wafers | |||
*Up to 10x6" wafer | |||
*small pieces | |||
| | |||
*Up to 1x4" wafers | |||
*small pieces | *small pieces | ||
|- | |- | ||
| Line 67: | Line 98: | ||
* SU-8 | * SU-8 | ||
* Metals | * Metals | ||
| | |||
* Silicon | |||
* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
| | |||
* Silicon | |||
* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
| Line 72: | Line 122: | ||
| Substrate gets hot during deposition | | Substrate gets hot during deposition | ||
(for a 60 nm film it rose above 123 C) | (for a 60 nm film it rose above 123 C) | ||
|Deposition rate is 0. | |||
Wait for low base pressure before start (3-5 10<sup>-7</sup> Torr) | |||
|Deposition rate is 0.107 nm/s for 150W and 3mTorr (Src3, DC) | |||
|Deposition rate is 0.124 nm/s for 140W and 3mTorr (PC3, Src3 DC), | |||
(0.04 nm/s using HiPIMS - PC3, Src3) | |||
|Note! Bad uniformity. | |||
Deposition rate is 0.03 nm/s using big glass chamber. | |||
Deposition rate is 0.2-0.9 nm/s (current dependent) using small glass chamber. | |||
|} | |} | ||
'''*''' ''For thicknesses above 20 nm talk to staff (write to thinfilm@ | '''*''' ''For thicknesses above 20 nm talk to staff (write to thinfilm@nanolab.dtu.dk), as the heat and subsequent pressure rise means the deposition needs to be carried out in steps.'' | ||
Latest revision as of 17:13, 1 February 2023
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Tungsten deposition
Tungsten (W) can be deposited by e-beam evaporation and sputtering. However, in case of evaporation the precess generates a lot of heat (despite water cooling), and this means the pressure rises as the chamber is baking out. It is therefore not easy to deposit films much thicker than 50-60 nm. In the Temescal we stopped the deposition every 20 nm to let the pressure drop. Also, the rate needs to be low, to avoid overheating. Talk to staff when you want to deposit W (write to thinfilm@nanolab.dtu.dk). Sputtering can be used without any sufficient issues. In the chart below you can compare the deposition equipment.
Evaporation of W
Sputtering of W
- Sputtering of Tungsten in the Sputter Coater 3
- DC Sputtering of Tungsten in the Sputter-System (Lesker)
- DC Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)
- HiPIMS Sputtering of Tungsten in the Sputter-system Metal-Nitride (PC3)
| E-beam evaporation (Temescal) | Sputter-system (Lesker) | Sputter deposition ((Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ) | Sputter coater (Sputter coater 03) | |
|---|---|---|---|---|
| General description | E-beam evaporation of W | DC Sputtering of W | DC and HiPIMS Sputtering of W | DC Sputtering of W |
| Pre-clean | Ar ion beam | None | RF bias on a substrate | None |
| Layer thickness | 10Å to 20nm* | 10Å to 600nm | 10Å to 600nm | 10Å to 250nm |
| Deposition rate | 0.5 Å/s to 1 Å/s | about 1 Å/s | about 1 Å/s | configuration dependent |
| Batch size |
|
|
|
|
| Allowed materials |
|
|
|
|
| Comments | Substrate gets hot during deposition
(for a 60 nm film it rose above 123 C) Wait for low base pressure before start (3-5 10-7 Torr) |
Deposition rate is 0.107 nm/s for 150W and 3mTorr (Src3, DC) | Deposition rate is 0.124 nm/s for 140W and 3mTorr (PC3, Src3 DC),
(0.04 nm/s using HiPIMS - PC3, Src3) |
Note! Bad uniformity.
Deposition rate is 0.03 nm/s using big glass chamber. Deposition rate is 0.2-0.9 nm/s (current dependent) using small glass chamber. |
* For thicknesses above 20 nm talk to staff (write to thinfilm@nanolab.dtu.dk), as the heat and subsequent pressure rise means the deposition needs to be carried out in steps.