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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel click here]'''
{{cc-nanolab}}
 
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel click here]'''
 


== Nickel deposition ==
== Nickel deposition ==
Nickel can be deposited by e-beam evaporation or electroplating. In the chart below you can compare the different deposition equipment.
Nickel can be deposited by e-beam evaporation or sputtering at DTU Nanolab. For electroplating you will have to contact other institutes at DTU, e.g., DTU Mechanical Engineering.  
 
*[[/Electroplating of nickel|Electroplating of nickel]]
*[[/Stress Wordentec Ni films|Stress in Wordentec Ni films: study here]].


Some process information is available here for e-beam evaporated films:
<!--*[[/Electroplating of nickel|Electroplating of nickel]]-->
*[[/Stress Wordentec Ni films|Stress in e-beam evaporated Ni films: study here]] ''(from the now decommissioned Wordentec deposition tool - basic trends in results should be transferable to other e-beam evaporators).''


In the chart below you can compare the different deposition equipment:


{| border="1" cellspacing="0" cellpadding="3"  
{| border="1" cellspacing="0" cellpadding="3"  
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|Cluster-based sputter system]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni]])
|-  
|-  


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! General description
! General description
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|Sputter deposition of Nickel
|Sputter deposition of Nickel
|Sputter deposition of Nickel
|Sputter deposition of Nickel
|Electroplating of Nickel
|-
|-


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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion bombardment
|Ar ion etch (only in E-beam evaporator Temescal)
|RF Ar clean
|
|
|RF Ar clean
|RF Ar clean
|RF Ar clean
|None
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"


! Layer thickness
! Layer thickness
|10Å to 1 µm*
|10 Å to 1 µm *
|10Å to 1 µm*
|10 Å to 500 nm **
|10Å to 2000 Å
|10 Å to 500 nm **
|10Å to 5000 Å
|10Å to 5000 Å
|~20 µm to ~1000 µm
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"


! Deposition rate
! Deposition rate
|2Å/s to 10Å/s
|1-10 Å/s
|10Å/s to 15Å/s
|Depends on process parameters, about 1 Å/s  
|1 to 10Å/s
|Depends on process parameters, at least ~ 4 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|Depends on process parameters. About 1 Å/s  
|Depends on process parameters.
|About 10 Å/s to 250 Å/s


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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*Up to 3x8" wafers (ask for holder)
*Up to 3x8" wafers (ask for holder)
*Many smaller pieces
*Many smaller pieces
|
*24x2" wafers or
*6x4" wafers or
*6x6" wafers
|
*1x 2" wafer or
*1x 4" wafers or
*Several smaller pieces
|
|
* Pieces or
* Pieces or
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*Up to 10x4" or 6" wafers
*Up to 10x4" or 6" wafers
*Many smaller pieces
*Many smaller pieces
|
*1x2" wafer or
*1x4" wafer or
*1x6" wafer


|-
|-
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|
|
* Silicon
*Almost any that does not degas at your intended substrate temperature. See also the [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
|
* Silicon
* Almost any that do not degas. See also the [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=244 cross-contamination sheet]
* Silicon oxide
* Silicon nitride
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
|
|
* Silicon
*Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* Silicon oxide
 
* Silicon (oxy)nitride
|-
* Photoresist
|-
* PMMA
|-style="background:WhiteSmoke; color:black"
* Mylar
! Comment
* SU-8
* Metals
|
|
* Silicon
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* Metals
|
|
*Almost any that do not outgas if you plan to use substrate heating. Check the cross-contamination sheets in Labmanager.
*May use high-strength magnet for deposition.  
|
|
Base materials:<br>
*May use high-strength magnet for deposition
*Silicon
*Polymers with Tg > 75°C
*Metals (bulk)
*Cross-linked or hard baked resists supported by one of the above mentioned materials
Seed metals:<br>
* NiV (75 - 100 nm recommended)
* Ti (~5 nm) + Au (75-100 nm recommended)
* Cr (~5 nm) + Au (75-100 nm recommended)
* TiW
* Cr
|-
|-
|}
'''*''' ''To deposit a cumulative thickness above 600 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine''
'''**''' ''To deposit a cumulative thickness above 200 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine''
==Quality control of e-beam evaporated Ni films==
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality control (QC) for the E-beam Evaporator (Temescal) and the E-beam Evaporator (10-pockets)'''
|-
|-
|-style="background:WhiteSmoke; color:black"
! Comment
| Thicknesses above 2000 Å requires special permission
|
|
*[[/Stress Wordentec Ni films|Stress in Wordentec Ni films: study here]].
Nickel deposition is tested occasionally, around 1 time per year in each machine. You are welcome to contact staff to request an extra test of the material.
*Thicknesses above 2000 Å requires special permission
 
|
'''LabManager links to procedures and data''' (require login):
|May use high-strength magnet for deposition
 
|May use high-strength magnet for deposition
*[http://labmanager.dtu.dk/d4Show.php?id=5862&mach=429 QC procedure for the E-beam Evaporator (Temescal)]<br>
|Sample must be compatible with plating bath (pH = 3,65 and T = 52°C). Seed metal necessary.
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=429 The newest QC data for the E-beam Evaporator (Temescal)]<br>
 
*[http://labmanager.dtu.dk/d4Show.php?id=5862&mach=511 QC procedure for the E-beam Evaporator (10-pockets)]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=511 The newest QC data for the E-beam Evaporator (10-pockets)]<br>
 
 
{| {{table}}
| align="left" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="left" style="width:400px"
! QC Recipe:
! Standard recipes/Ni
|-
|Deposition rate
|2 Å/s
|-
|Thickness
|100 nm
|-  
|Pressure
|Below 1*10<sup>-6</sup> mbar
|-
|}
|-
|-
|}


{| {{table}}
| align="left" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="left" style="width:400px"
!QC limits
!Both E-beam Evaporators
|-
|Deposition rate deviation
|± 20 %
|-
|Measured average thickness
|± 10 %
|-
|Thickness deviation across a 4" wafer
|± 5 %
|-
|}
|-
|}
|}


'''*''' ''To deposit layers thicker than 600 nanometers permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine''
Thickness is measured in 5 points with a stylus profiler (usually DektakXT). <br>
|}
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