Specific Process Knowledge/Thin film deposition/Deposition of TiW: Difference between revisions

Latest revision as of 14:04, 6 June 2023

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Sputtering of TiW

Deposition of TiW alloy can be done in the Wordentec. If necessary, processes may also be developed for depositing TiW in the Lesker sputter setups (contact responsible staff for this).

	Sputter deposition (Wordentec)
General description	Sputter deposition of TiW
Pre-clean	RF Ar clean (not working at the moment (sept 2022))
Layer thickness	.
Deposition rate	Depending on process parameters, see here.
Batch size	24x2" wafers or 6x4" wafers or 6x6" wafers
Allowed substrates	Silicon wafers Quartz wafers Pyrex wafers
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals
Comments	TiW alloy: 10%/90% by weight

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 '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_TiW click here]'''
+<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
-Deposition of TiW alloy can be done in the Wordentec. If necessary, processes may also be developed for depositing TiW in the Lesker sputter setups (contact responsible staff for this).
 ==Sputtering of TiW==
-* [[/Sputtering of TiW in Wordentec|Sputtering of TiW in Wordentec]]
+Deposition of TiW alloy can be done in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]. If necessary, processes may also be developed for depositing TiW in the Lesker sputter setups (contact responsible staff for this).
+*[[/Sputtering of TiW in Wordentec|Sputtering of TiW in Wordentec]]
+*[[Specific Process Knowledge/Thin film deposition/Deposition of TiW/Sputtering of TiW in Wordentec/Grain size and uniformity of TiW layers|Results of a study on the grain size and uniformity of TiW sputtered in the Wordentec]]
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 |-style="background:LightGrey; color:black"
 ! Pre-clean
-|RF Ar clean
+|RF Ar clean (not working at the moment (sept 2022))
 |-
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 | TiW alloy: 10%/90% by weight
 |}
-==Deposited rates==
-Depening on the settings (pressure and effect) during the sputtering process, the roughness and grain size of the deposited layer can be different. The deposition rate will also change with different settings, as seen below.
-'''Pressure <math>1*10^{-3}</math> mbar, Effect 150 W'''
-The rate is established to be '''0.9 '''Å/s (in the center of the 4" wafer, 0.7 Å/s at the edge).
-This corresponds to a deposition time of '''1 minute 55 seconds''' for deposition of '''10 nm'''.
-'''Pressure <math>1*10^{-2}</math> mbar, Effect 150 W'''
-The rate is established to be '''1.3 '''Å/s (in the center of the 4" wafer, 1.0 Å/s at the edge).
-This corresponds to a deposition time of '''1 min 16 seconds''' for deposition of '''10 nm'''.
-'''Pressure <math>1*10^{-2}</math> mbar, Effect 300 W'''
-The rate is established to be '''2.2 '''Å/s (in the center of the 4" wafer, 1.8 Å/s at the edge).
-This corresponds to a deposition time of '''45 seconds''' for deposition of '''10 nm'''.
-'''Pressure <math>5*10^{-2}</math> mbar, Effect 150 W'''
-The rate is established to be '''1.3''' Å/s (in the center of the 4" wafer, 1.0 Å/s at the edge).
-This corresponds to a deposition time of '''1 minute 15 seconds''' for deposition of '''10 nm'''.
-'''Pressure <math>5*10^{-2}</math> mbar, Effect 250 W'''
-The rate is established to be '''2.4''' Å/s (in the center of the 4" wafer, 1.6 Å/s at the edge).
-This corresponds to a deposition time of '''42 seconds''' for deposition of '''10 nm'''.
-''Deposition rates measured August-September 2008, KNIL.''
-==Deposited film characteristics==
-AFM pictures show how the surface roughness is dependent on the process parameters.
-For the sputter process, the effect and argon pressure can be set to different values. Depending on the process parameters, the deposited layers will have different characteristics: the roughness, grain size and uniformity may be differnt.
-'''Effect 150 W, pressure 1*10<sup>-3</sup> mbar'''
-With use of the settings 150W and 1*10<sup>-3</sup> mbar, a surface with low roughness is deposited.
-[[Image:Tiw 150W 0 001 nr2.jpg|480x480px|center|thumb|AFM picture of sputter deposited TiW. Used settings: 150W and 1*10<sup>-3</sup> mbar.]]
-''Measurement done September 2008, KNIL.''