Specific Process Knowledge/Thin film deposition/Deposition of Niobium: Difference between revisions
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<i> This page is written by <b>DTU Nanolab staff</b></i> | |||
== Deposition of Nb == | == Deposition of Nb == | ||
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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|E-beam deposition of Nb | |E-beam deposition of Nb | ||
(line-of-sight deposition) | (line-of-sight deposition) | ||
|Sputter deposition of Nb | |||
(not line-of-sight deposition) | |||
|Sputter deposition of Nb | |Sputter deposition of Nb | ||
(not line-of-sight deposition) | (not line-of-sight deposition) | ||
| Line 25: | Line 30: | ||
!Pre-clean | !Pre-clean | ||
|Ar ion bombardment | |Ar ion bombardment | ||
|RF Ar clean | |||
|RF Ar clean | |RF Ar clean | ||
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!Layer thickness | !Layer thickness | ||
|10Å to | |10Å to 200 nm* | ||
|10Å to | |10Å to 600 nm** | ||
|''ask staff, probably similar to old Lesker sputter system'' | |||
|- | |- | ||
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! Deposition rate | ! Deposition rate | ||
|0.5Å/s to | |0.5Å/s to 5Å/s | ||
| ~1Å/s | | ~1Å/s | ||
| ? Probably similar to old Lesker sputter system | |||
|- | |- | ||
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*smaller pieces | *smaller pieces | ||
*Up to 1x6" wafers | *Up to 1x6" wafers | ||
| | |||
*Up to 10x4" or 6" wafers | |||
*Many smaller pieces | |||
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* SU-8 | * SU-8 | ||
* Metals | * Metals | ||
| | |||
* Almost any that do not outgas. | |||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Comment | ! Comment | ||
| Substrates get heated during the deposition. | |||
For 100 nm Nb at 2 Å/s, the substrate reached about 105 °C. | |||
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| | | | ||
|} | |} | ||
''' | '''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)'' | ||
'''*''' ''To deposit layers thicker than | '''**''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)'' | ||
Latest revision as of 09:33, 9 June 2023
Feedback to this page: click here
This page is written by DTU Nanolab staff
Deposition of Nb
Niobium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the deposition equipment.
| E-beam evaporation (Temescal) | Sputter deposition (Lesker) | Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) | |
|---|---|---|---|
| General description | E-beam deposition of Nb
(line-of-sight deposition) |
Sputter deposition of Nb
(not line-of-sight deposition) |
Sputter deposition of Nb
(not line-of-sight deposition) |
| Pre-clean | Ar ion bombardment | RF Ar clean | RF Ar clean |
| Layer thickness | 10Å to 200 nm* | 10Å to 600 nm** | ask staff, probably similar to old Lesker sputter system |
| Deposition rate | 0.5Å/s to 5Å/s | ~1Å/s | ? Probably similar to old Lesker sputter system |
| Batch size |
|
|
|
| Allowed materials |
|
|
|
| Comment | Substrates get heated during the deposition.
For 100 nm Nb at 2 Å/s, the substrate reached about 105 °C. |
* To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)
** To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)