Specific Process Knowledge/Thin film deposition/Deposition of AZO: Difference between revisions
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''All content by DTU Nanolab staff''. | |||
=AZO deposition= | |||
AZO can be deposited by | AZO can be deposited by sputtering or atomic layer deposition (ALD). In sputter-deposition of AZO, we use an AZO target that may be RF-sputtered or reactively DC-sputtered. You can also co-deposit Al and ZnO. Note that in multipurpose sputter systems such as ours it may be difficult to obtain low enough contamination for high-quality AZO. Talk to Nanolab staff or your colleagues if you would like to locate a sputter system that can be dedicated to AZO-deposition. | ||
In the chart below you can compare the different deposition equipment available here at Nanolab: | |||
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|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
!Sputter deposition [[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]] | |||
! | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]]) | ||
! Atomic layer deposition ([[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]]) | ! Atomic layer deposition ([[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]]) | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! General description | ! General description | ||
| | | | ||
| Atomic layer deposition of AZO | *Reactive DC sputtering | ||
*pulsed DC sputtering | |||
*RF sputtering | |||
*Reactive HiPIMS (high-power impulse magnetron sputtering) | |||
| | |||
*Reactive DC sputtering | |||
*RF sputtering | |||
| | |||
*Atomic layer deposition of AZO | |||
|- | |- | ||
|- | |- | ||
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|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
| | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to | |few nm to ? hundreds of nm* | ||
| | |10Å to 5000Å* | ||
|0 to 1000 Å | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
| | |Depending on process parameters. | ||
| | |Depending on process parameters, e.g., 0.3 Å/s reactive DC-sputtering (see process log for details) | ||
|Depending on temperature | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Batch size | ! Batch size | ||
| | | | ||
*Up to 1x4" | *Many smaller samples | ||
* | *Up to 10x4" or 6" wafers (Cassette load in the LL) | ||
| | |||
*Pieces or | |||
*1x4" wafer or | |||
*1x6" wafer | |||
| | | | ||
*Pieces or | *Pieces or | ||
*1x4" wafer or | *1x4" wafer or | ||
*1x6" wafer | *1x6" wafer or | ||
*1x8" wafer | |||
|- | |- | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Allowed materials | !Allowed materials | ||
| | | | ||
* | *Almost any that do not outgas and are not very toxic | ||
* | *See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet] | ||
| | | | ||
* Silicon | * Silicon | ||
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* Metals | * Metals | ||
* Carbon | * Carbon | ||
| | |||
*Silicon | |||
*Silicon oxide, silicon nitride | |||
*Quartz/fused silica | |||
*Al, Al<sub>2</sub>O<sub>3</sub> | |||
*Ti, TiO<sub>2</sub> | |||
*Other metals (use dedicated carrier wafer) | |||
*III-V materials (use dedicated carrier wafer) | |||
*Polymers (depending on the melting point/deposition temperature, use carrier wafer) | |||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Comment | ! Comment | ||
| | | | ||
*Uses 3" target | |||
*Substrate rotation | |||
*Substrate RF bias option | |||
| | |||
*Uses 2" target | |||
*Substrate rotation | |||
*Substrate RF Bias (optional) | |||
| | | | ||
|} | |} | ||
'''*''' ''For thicknesses above 200 nm permission is required.'' | '''*''' ''For thicknesses above 200 nm permission is required. Write to [mailto:thinfilm@nanolab.dtu.dk thinfilm@nanolab.dtu.dk].'' |
Latest revision as of 13:42, 2 June 2023
Feedback to this page: click here
All content by DTU Nanolab staff.
AZO deposition
AZO can be deposited by sputtering or atomic layer deposition (ALD). In sputter-deposition of AZO, we use an AZO target that may be RF-sputtered or reactively DC-sputtered. You can also co-deposit Al and ZnO. Note that in multipurpose sputter systems such as ours it may be difficult to obtain low enough contamination for high-quality AZO. Talk to Nanolab staff or your colleagues if you would like to locate a sputter system that can be dedicated to AZO-deposition.
In the chart below you can compare the different deposition equipment available here at Nanolab:
Sputter deposition Sputter-system Metal-Oxide(PC1) | Sputter deposition (Sputter-System(Lesker)) | Atomic layer deposition (ALD Picosun R200) | |
---|---|---|---|
General description |
|
|
|
Pre-clean | RF Ar clean | RF Ar clean | |
Layer thickness | few nm to ? hundreds of nm* | 10Å to 5000Å* | 0 to 1000 Å |
Deposition rate | Depending on process parameters. | Depending on process parameters, e.g., 0.3 Å/s reactive DC-sputtering (see process log for details) | Depending on temperature |
Batch size |
|
|
|
Allowed materials |
|
|
|
Comment |
|
|
* For thicknesses above 200 nm permission is required. Write to thinfilm@nanolab.dtu.dk.