Specific Process Knowledge/Thin film deposition/Deposition of AZO: Difference between revisions

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''All content by DTU Nanolab staff''.


=AZO deposition=


AZO can be deposited by Sputtering process and atomic layer deposition (ALD). In the chart below you can compare the different deposition equipment.
AZO can be deposited by sputtering or atomic layer deposition (ALD). In sputter-deposition of AZO, we use an AZO target that may be RF-sputtered or reactively DC-sputtered. You can also co-deposit Al and ZnO. Note that in multipurpose sputter systems such as ours it may be difficult to obtain low enough contamination for high-quality AZO. Talk to Nanolab staff or your colleagues if you would like to locate a sputter system that can be dedicated to AZO-deposition.
 
In the chart below you can compare the different deposition equipment available here at Nanolab:




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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
!Sputter deposition [[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]]
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]])
! Atomic layer deposition ([[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]])
! Atomic layer deposition ([[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]])
|-
|-
|-style="background:WhiteSmoke; color:black"  
|-style="background:WhiteSmoke; color:black"  
! General description
! General description
| Sputter deposition of AZO
|  
| Atomic layer deposition of AZO
*Reactive DC sputtering
*pulsed DC sputtering
*RF sputtering
*Reactive HiPIMS (high-power impulse magnetron sputtering)
|  
*Reactive DC sputtering
*RF sputtering
|
*Atomic layer deposition of AZO
|-
|-
|-
|-
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|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|
|-
|-
|-style="background:WhiteSmoke; color:black"  
|-style="background:WhiteSmoke; color:black"  
! Layer thickness
! Layer thickness
|10Å to 1µm*
|few nm to ? hundreds of nm*
|10Å to
|10Å to 5000Å*
|0 to 1000 Å
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|Depending on process parameters.
|~0./s
|Depending on process parameters, e.g., 0.3 Å/s reactive DC-sputtering (see process log for details)
|Depending on temperature
|-
|-
|-style="background:WhiteSmoke; color:black"  
|-style="background:WhiteSmoke; color:black"  
! Batch size
! Batch size
|
|
*Up to 1x4" wafers
*Many smaller samples
*smaller pieces
*Up to 10x4" or 6" wafers (Cassette load in the LL)
|
*Pieces or
*1x4" wafer or
*1x6" wafer
|
|
*Pieces or
*Pieces or
*1x4" wafer or
*1x4" wafer or  
*1x6" wafer
*1x6" wafer or
*1x8" wafer
|-
|-


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|-style="background:LightGrey;  color:black"
|-style="background:LightGrey;  color:black"
!Allowed materials
!Allowed materials
|
|
* Silicon
*Almost any that do not outgas and are not very toxic
* Silicon oxide
*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
* Silicon
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* Metals  
* Metals  
* Carbon
* Carbon
|
*Silicon
*Silicon oxide, silicon nitride
*Quartz/fused silica
*Al, Al<sub>2</sub>O<sub>3</sub>
*Ti, TiO<sub>2</sub>
*Other metals (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|
|
*Uses 3" target
*Substrate rotation
*Substrate RF bias option
|
*Uses 2" target
*Substrate rotation
*Substrate RF Bias (optional)
|
|
|}
|}
'''*''' ''For thicknesses above 200 nm permission is required.''
'''*''' ''For thicknesses above 200 nm permission is required. Write to [mailto:thinfilm@nanolab.dtu.dk thinfilm@nanolab.dtu.dk].''

Latest revision as of 13:42, 2 June 2023

Feedback to this page: click here

All content by DTU Nanolab staff.

AZO deposition

AZO can be deposited by sputtering or atomic layer deposition (ALD). In sputter-deposition of AZO, we use an AZO target that may be RF-sputtered or reactively DC-sputtered. You can also co-deposit Al and ZnO. Note that in multipurpose sputter systems such as ours it may be difficult to obtain low enough contamination for high-quality AZO. Talk to Nanolab staff or your colleagues if you would like to locate a sputter system that can be dedicated to AZO-deposition.

In the chart below you can compare the different deposition equipment available here at Nanolab:


Sputter deposition Sputter-system Metal-Oxide(PC1) Sputter deposition (Sputter-System(Lesker)) Atomic layer deposition (ALD Picosun R200)
General description
  • Reactive DC sputtering
  • pulsed DC sputtering
  • RF sputtering
  • Reactive HiPIMS (high-power impulse magnetron sputtering)
  • Reactive DC sputtering
  • RF sputtering
  • Atomic layer deposition of AZO
Pre-clean RF Ar clean RF Ar clean
Layer thickness few nm to ? hundreds of nm* 10Å to 5000Å* 0 to 1000 Å
Deposition rate Depending on process parameters. Depending on process parameters, e.g., 0.3 Å/s reactive DC-sputtering (see process log for details) Depending on temperature
Batch size
  • Many smaller samples
  • Up to 10x4" or 6" wafers (Cassette load in the LL)
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer or
  • 1x8" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)


Comment
  • Uses 3" target
  • Substrate rotation
  • Substrate RF bias option
  • Uses 2" target
  • Substrate rotation
  • Substrate RF Bias (optional)

* For thicknesses above 200 nm permission is required. Write to thinfilm@nanolab.dtu.dk.