Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel click here]'''
 
'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
 
'''All links to Labmanager Including APV and QC requires login.'''


== Nickel deposition ==
== Nickel deposition ==
Nickel can be deposited by e-beam evaporation or electroplating. In the chart below you can compare the different deposition equipment.
Nickel can be deposited by e-beam evaporation or sputtering at DTU Nanolab. For electroplating you will have to contact other institutes at DTU, e.g., DTU Mechanical Engineering.  


*[[/Electroplating of nickel|Electroplating of nickel]]
Some process information is available here for e-beam evaporated films:
<!--*[[/Electroplating of nickel|Electroplating of nickel]]-->
*[[/Stress Wordentec Ni films|Stress in Wordentec Ni films: study here]].
*[[/Stress Wordentec Ni films|Stress in Wordentec Ni films: study here]].


 
In the chart below you can compare the different deposition equipment:


{| border="1" cellspacing="0" cellpadding="3"  
{| border="1" cellspacing="0" cellpadding="3"  
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  


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|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|Sputter deposition of Nickel
|Sputter deposition of Nickel
|Electroplating of Nickel
|Sputter deposition of Nickel
|-
|-


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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion etch (only in E-beam evaporator Temescal)
|
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|
|RF Ar clean
|None
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"


! Layer thickness
! Layer thickness
|10Å to 5000 Å*
|10 Å to 1 µm *
|10Å to 1 µm*
|10 Å to 1 µm *
|10Å to 2000 Å
|10 Å to 5000 Å **
|10Å to 2000 Å
|10 Å to 5000 Å **
|A few µm to 1400 µm
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"


! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|1-10 Å/s
|10Å/s to 15Å/s
|1-10 Å/s
|1 to 10Å/s
|Depends on process parameters, about 1 Å/s  
|Depends on process parameters. About 1 Å/s  
|Depends on process parameters, at least ~ 4 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|About 10 Å/s to 250 Å/s


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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! Batch size
! Batch size
|
|
*Up to 1x4" wafers
*Up to 4x6" wafers
*smaller pieces
*Up to 3x8" wafers (ask for holder)
*Many smaller pieces
|
|
*24x2" wafers or  
*24x2" wafers or  
*6x4" wafers or
*6x4" wafers or
*6x6" wafers
*6x6" wafers
|
*1x 2" wafer or
*1x 4" wafers or
*Several smaller pieces
|
|
* Pieces or
* Pieces or
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* 1x6" wafer  
* 1x6" wafer  
|
|
*1x2" wafer or
*Up to 10x4" or 6" wafers
*1x4" wafer or
*Many smaller pieces
*1x6" wafer


|-
|-
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|
|
* Silicon
*Almost any that does not degas at your intended substrate temperature. See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
* Silicon oxide
* Silicon nitride
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
|
|
* Silicon
* Almost any that do not degas.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
*Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* Silicon oxide
 
* Silicon (oxy)nitride
* Photoresist
* Metals
|
Base materials:<br>
*Silicon
*Polymers with Tg > 65°C
*Cross-linked or hard baked resists supported by one of the above two materials
Seed metals:<br>
* NiV (75 - 100 nm recommended)
* Ti (~5 nm) + Au (75-100 nm recommended)
* Cr (~5 nm) + Au (75-100 nm recommended)
* TiW
* Cr
|-
|-
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
| Thicknesses above 2000 Å requires special permission
|
|
|
*[[/Stress Wordentec Ni films|Stress in Wordentec Ni films: study here]].  
*[[/Stress Wordentec Ni films|Stress in Wordentec Ni films: study here]].  
*Thicknesses above 2000 Å  requires special permission
|
|
*May use high-strength magnet for deposition.
|
|
|Sample must be compatible with plating bath. Seed metal necessary.
*May use high-strength magnet for deposition
|-
|-


|}
|}


'''*''' ''To deposit layers thicker then 2000 Å permission is required (contact Thin film group)''
'''*''' ''To deposit a cumulative thickness above 600 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine''
 
 
'''**''' ''To deposit a cumulative thickness above 200 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine''
 
==Quality control of e-beam evaporated Ni films==
 
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality control (QC) for Wordentec'''
|-
|
Nickel deposition is tested occasionally, around 1-2 times per year. LabManager links require login.
*[http://labmanager.dtu.dk/d4Show.php?id=3736&mach=167 QC procedure for Wordentec in LabManager]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=167 The newest QC data for Wordentec in LabManager]<br>
 
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"
 
! QC Recipe:
! Process 5
|-
|Deposition rate
|10 Å/s
|-
|Thickness
|100 nm
|-
|Pressure
|Below 4*10<sup>-6</sup> mbar
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:440px"
!QC limits
!Wordentec
|-
|Measured average thickness (Å)
|± 10 %
|-
|Lowest accepted deposition rate (Å/s)
|6 Å/s
|-
|}
|-
|}
Thickness is measured in 5 points with a stylus profiler.
|}
 
 
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality control (QC) for the Temescal'''
|-
|
Nickel deposition is tested occasionally, around 1 time per year. LabManager links require login.
*[http://labmanager.dtu.dk/d4Show.php?id=5862&mach=429 QC procedure for the Temescal in LabManager]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=429 The newest QC data for the Temescal in LabManager]<br>
 
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:400px"
 
! QC Recipe:
! Standard recipes/Ni
|-
|Deposition rate
|10 Å/s
|-
|Thickness
|100 nm
|-
|Pressure
|Below 1*10<sup>-6</sup> mbar
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:440px"
!QC limits
!Temescal
|-
|Deposition rate deviation
|± 20 %
|-
|Measured average thickness
|± 10 %
|-
|Thickness deviation across a 4" wafer
|± 5 %
|-
|}
|-
|}
Thickness is measured in 5 points with a stylus profiler. <br>
|}

Latest revision as of 12:11, 22 January 2024

Feedback to this page: click here

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Labmanager Including APV and QC requires login.

Nickel deposition

Nickel can be deposited by e-beam evaporation or sputtering at DTU Nanolab. For electroplating you will have to contact other institutes at DTU, e.g., DTU Mechanical Engineering.

Some process information is available here for e-beam evaporated films:

In the chart below you can compare the different deposition equipment:

E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) E-beam evaporation (Wordentec) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Nickel E-beam deposition of Nickel Sputter deposition of Nickel Sputter deposition of Nickel
Pre-clean Ar ion etch (only in E-beam evaporator Temescal) RF Ar clean RF Ar clean
Layer thickness 10 Å to 1 µm * 10 Å to 1 µm * 10 Å to 5000 Å ** 10 Å to 5000 Å **
Deposition rate 1-10 Å/s 1-10 Å/s Depends on process parameters, about 1 Å/s Depends on process parameters, at least ~ 4 Å/s, see conditions here
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • Many smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed materials

Almost any that does not degas. See the cross-contamination sheet.

  • Almost any that do not degas.
  • Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for PC1 and PC3
Comment
  • May use high-strength magnet for deposition.
  • May use high-strength magnet for deposition

* To deposit a cumulative thickness above 600 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine


** To deposit a cumulative thickness above 200 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine

Quality control of e-beam evaporated Ni films

Quality control (QC) for Wordentec

Nickel deposition is tested occasionally, around 1-2 times per year. LabManager links require login.

QC Recipe: Process 5
Deposition rate 10 Å/s
Thickness 100 nm
Pressure Below 4*10-6 mbar
QC limits Wordentec
Measured average thickness (Å) ± 10 %
Lowest accepted deposition rate (Å/s) 6 Å/s

Thickness is measured in 5 points with a stylus profiler.


Quality control (QC) for the Temescal

Nickel deposition is tested occasionally, around 1 time per year. LabManager links require login.

QC Recipe: Standard recipes/Ni
Deposition rate 10 Å/s
Thickness 100 nm
Pressure Below 1*10-6 mbar
QC limits Temescal
Deposition rate deviation ± 20 %
Measured average thickness ± 10 %
Thickness deviation across a 4" wafer ± 5 %

Thickness is measured in 5 points with a stylus profiler.