Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si click here]''' | ||
==Test of the deposition rate of Silicon and film characteristics== | ==Test of the deposition rate of Silicon and film characteristics== | ||
'''''The work in this section was done by Kristian Hagsted Rasmussen @DTU Danchip before 2012 - ''''' | |||
'''''with followup by Berit Herstrøm (bghe) @DTU Nanolab.''''' | |||
Please note that it is from 2022 no longer possible to deposit Si with the Ion beam etcher here at Nanolab. | |||
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! | ! | ||
!Recipe 2 - with the | !Recipe 2 - with the small grids) | ||
|- | |- | ||
|Platen angle | |Platen angle | ||
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===Results with recipe 2 and the | ===Results with recipe 2 and the small grids=== | ||
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! | ! | ||
!Recipe 1 - with the | !Recipe 1 - with the large grids) | ||
|- | |- | ||
|Platen angle | |Platen angle | ||
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===Results with recipe 1 and the | ===Results with recipe 1 and the large grids=== | ||
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Latest revision as of 13:38, 22 January 2024
Feedback to this page: click here
Test of the deposition rate of Silicon and film characteristics
The work in this section was done by Kristian Hagsted Rasmussen @DTU Danchip before 2012 -
with followup by Berit Herstrøm (bghe) @DTU Nanolab.
Please note that it is from 2022 no longer possible to deposit Si with the Ion beam etcher here at Nanolab.
Recipe 2 - with the small grids) | |
---|---|
Platen angle | 10 degrees |
Platen rotation speed | 20rpm |
Ar(N) flow | 4 sccm |
Ar(dep. source) flow | 8 sccm |
I(N) | 240mA |
Power setting | 700W |
I(B) | 200mA |
V(B) | 1100V |
Vacc(B) | 400V |
Results with recipe 2 and the small grids
Depostion time | 10 min (2016-08-04 bghe) |
---|---|
Characterization method | Ellipsometer 3 angles |
Deposition thickness | 50 nm (2016-08-04 bghe) |
Deposition rate | 5.0 nm/min |
Refractive index @632nm |
n=? |
Refractive index @1000nm @950nm using the ellipsometer |
n=? |
Refractive index @1550nm |
n=? |
Recipe
Recipe 1 - with the large grids) | |
---|---|
Platen angle | 10 degrees |
Platen rotation speed | 20rpm |
Ar(N) flow | 4 sccm |
Ar(dep. source) flow | 8 sccm |
I(N) | 320mA |
Power | 700W |
I(B) | 280mA |
V(B) | 1100V |
Vacc(B) | 400V |
Results with recipe 1 and the large grids
Depostion time | 10 min (before 2013) | 30 min (before 2013) | 30 min (before 2013) | 30 min (2013-10-4) |
---|---|---|---|---|
Characterization method | FilmTek | FilmTek | Ellipsometer 3 angles | Ellipsometer 3 angles |
Deposition thickness | 71 nm | 229 nm | 242 nm | 194 nm (2013-10-4) |
Deposition rate | 7.1 nm/min | 7.6 nm/min | 8.1 nm/min | 6.5 nm/min |
Refractive index @632nm |
n=4.55 |
n=4.916 |
n=4.589 |
n=4.625 |
Refractive index @1000nm @950nm using the ellipsometer |
n=? |
n=4.297 |
n=4.136 |
n=4.206 |
Refractive index @1550nm |
n=? |
n=? |
n=? |
n=3.970 |
Roughness | 6.1 nm | 10.4 nm | 1.1 nm | 0.9 nm |