Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions

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''All text by Nanolab staff''


==Deposition of aluminium oxide==
==Deposition of Al<sub>2</sub>O<sub>3</sub>==
Aluminium oxide (Alumina) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]]. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample
Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub>) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the evaporation or sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.


*[[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]]
*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD|Al<sub>2</sub>O<sub>3</sub>  deposition using ALD]]
*[[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD|Al2O3 deposition using ALD]]
*[[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]]
*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|Sputter-System Metal-Oxide(PC1)]]
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition of Alumina/E-beam Evaporation of Al2O3 in Temescal-2|Evaporation of Al<sub>2</sub>O<sub>3</sub> in E-Beam Evaporator (10-pockets)]]


==Comparison of the methods for deposition of Titanium Oxide==
==Comparison of the methods for deposition of Alumium Oxide==
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
!Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Oxide(PC1)]]
![[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]]
![[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|10-pocket e-beam evaporator]]
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!Generel description
!Generel description
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*TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.
*RF sputtering from Al<sub>2</sub>O<sub>3</sub> target
*Reactive sputtering
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*Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma.
*RF sputtering from Al<sub>2</sub>O<sub>3</sub> target
*RF sputtering of TiO2 target
*Pulsed DC reactive sputtering
*Reactive HIPIMS (high-power impulse magnetron sputtering)
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* E-beam evaporation of TiO2
*ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub>
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*ALD (atomic layer deposition) of TiO<sub>2</sub>
*E-beam evaporation of Al<sub>2</sub>O<sub>3</sub> pellets or of Al in an O<sub>2</sub> flow
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!Stoichiometry
!Stoichiometry
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*Can probably be varied (sputter target: Ti, O2 added during deposition)
*Not tested
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*unknown
*Not tested
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*unknown
*Al<sub>2</sub>O<sub>3</sub>, very good
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*Temperature dependent - Anatase or amorphous TiO<sub>2</sub>
*Not tested yet
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!Film Thickness
!Film Thickness
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*~10nm - ~0.5µm(>2h)
*few nm - 200 nm
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*~10nm - ~0.5µm(>2h)
*few nm - 200-300 nm
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*~10nm - ~200 nm
* 0nm - 100 nm
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* 0nm - 100nm
*few nm - 200 nm (talk to staff if you wish to deposit more than 100 nm as it can cause flaking in the chamber)
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!Deposition rate
!Deposition rate
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*3.0-3.5nm/min (reactive DC sputtering)
* 0.3 nm/min
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*3 - 5 nm/min (RF sputtering)
* About 1.7 nm/min, depends on sputtering parameters
*0.3 - 0.5nm/min
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* 1 - 2 Å/s
*0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
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* Not measured
* 1-2 Å/s
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!Step coverage
!Step coverage
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*Not Known
*unknown
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*Not Known
*unknown
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*Not Known
*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
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*Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
* We expect no step coverage unless using tilt holder, in which case the step coverage can be very good and can be tuned.
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!Process Temperature
!Process Temperature
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*Expected to be below 100<sup>o</sup>C
* room temperature
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*Done at RT. There is a possibility to run at higher temperatures
* Up to 600 °C
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*Sample temperature can be set to 20-250 <sup>o</sup>C
*150 °C - 350 °C
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*120<sup>o</sup>C - 150<sup>o</sup>C: Amorphous TiO<sub>2</sub>
* Up to 250 °C
*300<sup>o</sup>C - 350<sup>o</sup>C: Anatase TiO<sub>2</sub> 
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|-
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!More info on TiO2
!More info on Al<sub>2</sub>O<sub>3</sub>
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*[[/IBSD of TiO2|TiO2 made on IBE/IBSD Ionfab300]]
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*
*See [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|deposition conditions]]
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*
*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]
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*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD|TiO2 deposition using ALD]]
 
*[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/TiO2 deposition using ALD/TiO2 deposition on trenches using ALD|TiO2 deposition on trenches using ALD]]
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!Substrate size
!Substrate size
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*1 50mm wafer
* chips
*1 100mm wafer
* 1x 100 mm wafer
*1 150mm wafer
* 1x 150 mm wafer
*1 200mm wafer
*Smaller pieces can be mounted with capton tape
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*several small samples
* chips
*several 50 mm wafers (Ø150mm carrier)
* 10x 100 mm wafer
*1x 100 mm wafers
* 10x 150 mm wafer
*1x 150 mm wafers
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*1x 2" wafer or
*several smaller samples
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*1-5 100 mm wafers
*1-5 100 mm wafers
*1-5 150 mm wafers
*1-5 150 mm wafers
*Several smaller samples  
*Several smaller samples  
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* chips
* 1-3 x 100 mm wafers
* 1-3 x 150 mm wafers
* 1-3 x 200 mm wafers
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!'''Allowed materials'''
!'''Allowed materials'''
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*Almost any materials
*almost any that does not degas
*not Pb and very poisonous materials
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*Almost any materials
*almost any that does not degas. Note special carrier for III-V materials. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet].
*Pb and poisonous materials only after special agreement
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*Silicon  
*Silicon  
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*III-V materials (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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*almost any that does not degas. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]
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Latest revision as of 15:31, 7 February 2024

Feedback to this page: click here

All text by Nanolab staff

Deposition of Al2O3

Aluminium oxide (Alumina, Al2O3) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the evaporation or sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.

Comparison of the methods for deposition of Alumium Oxide

Sputter-System(Lesker) Sputter-System Metal-Oxide(PC1) ALD Picosun 200 10-pocket e-beam evaporator
Generel description
  • RF sputtering from Al2O3 target
  • Reactive sputtering
  • RF sputtering from Al2O3 target
  • Pulsed DC reactive sputtering
  • Reactive HIPIMS (high-power impulse magnetron sputtering)
  • ALD (atomic layer deposition) of Al2O3
  • E-beam evaporation of Al2O3 pellets or of Al in an O2 flow
Stoichiometry
  • Not tested
  • Not tested
  • Al2O3, very good
  • Not tested yet
Film Thickness
  • few nm - 200 nm
  • few nm - 200-300 nm
  • 0nm - 100 nm
  • few nm - 200 nm (talk to staff if you wish to deposit more than 100 nm as it can cause flaking in the chamber)
Deposition rate
  • 0.3 nm/min
  • About 1.7 nm/min, depends on sputtering parameters
  • 0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
  • 1-2 Å/s
Step coverage
  • unknown
  • unknown
  • Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
  • We expect no step coverage unless using tilt holder, in which case the step coverage can be very good and can be tuned.
Process Temperature
  • room temperature
  • Up to 600 °C
  • 150 °C - 350 °C
  • Up to 250 °C
More info on Al2O3
Substrate size
  • chips
  • 1x 100 mm wafer
  • 1x 150 mm wafer
  • chips
  • 10x 100 mm wafer
  • 10x 150 mm wafer
  • 1-5 100 mm wafers
  • 1-5 150 mm wafers
  • Several smaller samples
  • chips
  • 1-3 x 100 mm wafers
  • 1-3 x 150 mm wafers
  • 1-3 x 200 mm wafers
Allowed materials
  • almost any that does not degas
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)