Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions
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''All text by Nanolab staff'' | |||
==Deposition of | ==Deposition of Al<sub>2</sub>O<sub>3</sub>== | ||
Aluminium oxide (Alumina) can be deposited by use of ALD (atomic layer deposition) or by | Aluminium oxide (Alumina, Al<sub>2</sub>O<sub>3</sub>) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the evaporation or sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample. | ||
*[[Specific Process Knowledge/Thin film deposition/Lesker| | *[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/Al2O3_deposition_using_ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | ||
*[[ | *[[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] | ||
*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|Sputter-System Metal-Oxide(PC1)]] | |||
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition of Alumina/E-beam Evaporation of Al2O3 in Temescal-2|Evaporation of Al<sub>2</sub>O<sub>3</sub> in E-Beam Evaporator (10-pockets)]] | |||
==Comparison of the methods for deposition of | ==Comparison of the methods for deposition of Alumium Oxide== | ||
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" | {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" | ||
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! | ! | ||
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] | |||
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Oxide(PC1)]] | ||
![[ | |||
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | ![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD Picosun 200]] | ||
![[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|10-pocket e-beam evaporator]] | |||
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!Generel description | !Generel description | ||
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* | *RF sputtering from Al<sub>2</sub>O<sub>3</sub> target | ||
*Reactive sputtering | |||
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* | *RF sputtering from Al<sub>2</sub>O<sub>3</sub> target | ||
* | *Pulsed DC reactive sputtering | ||
*Reactive HIPIMS (high-power impulse magnetron sputtering) | |||
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* | *ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub> | ||
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* | *E-beam evaporation of Al<sub>2</sub>O<sub>3</sub> pellets or of Al in an O<sub>2</sub> flow | ||
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!Stoichiometry | !Stoichiometry | ||
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* | *Not tested | ||
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* | *Not tested | ||
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* | *Al<sub>2</sub>O<sub>3</sub>, very good | ||
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* | *Not tested yet | ||
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!Film Thickness | !Film Thickness | ||
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* | *few nm - 200 nm | ||
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* | *few nm - 200-300 nm | ||
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* | * 0nm - 100 nm | ||
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* | *few nm - 200 nm (talk to staff if you wish to deposit more than 100 nm as it can cause flaking in the chamber) | ||
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!Deposition rate | !Deposition rate | ||
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* | * 0.3 nm/min | ||
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* | * About 1.7 nm/min, depends on sputtering parameters | ||
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* | *0.088 - 0.097 nm/cycle (Using the "Al2O3" recipe, temperature dependent) | ||
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* | * 1-2 Å/s | ||
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!Step coverage | !Step coverage | ||
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* | *unknown | ||
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* | *unknown | ||
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* | *Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures) | ||
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* | * We expect no step coverage unless using tilt holder, in which case the step coverage can be very good and can be tuned. | ||
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!Process Temperature | !Process Temperature | ||
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* | * room temperature | ||
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* | * Up to 600 °C | ||
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* | *150 °C - 350 °C | ||
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* | * Up to 250 °C | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!More info on | !More info on Al<sub>2</sub>O<sub>3</sub> | ||
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* | *See [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|deposition conditions]] | ||
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* | *[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]] | ||
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!Substrate size | !Substrate size | ||
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* | * chips | ||
* 1x 100 mm wafer | |||
* | * 1x 150 mm wafer | ||
* | |||
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* | * chips | ||
* | * 10x 100 mm wafer | ||
* 10x 150 mm wafer | |||
* | |||
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*1-5 100 mm wafers | *1-5 100 mm wafers | ||
*1-5 150 mm wafers | *1-5 150 mm wafers | ||
*Several smaller samples | *Several smaller samples | ||
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* chips | |||
* 1-3 x 100 mm wafers | |||
* 1-3 x 150 mm wafers | |||
* 1-3 x 200 mm wafers | |||
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!'''Allowed materials''' | !'''Allowed materials''' | ||
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* | *almost any that does not degas | ||
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* | *almost any that does not degas. Note special carrier for III-V materials. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]. | ||
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*Silicon | *Silicon | ||
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*III-V materials (use dedicated carrier wafer) | *III-V materials (use dedicated carrier wafer) | ||
*Polymers (depending on the melting point/deposition temperature, use carrier wafer) | *Polymers (depending on the melting point/deposition temperature, use carrier wafer) | ||
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*almost any that does not degas. See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet] | |||
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Latest revision as of 15:31, 7 February 2024
Feedback to this page: click here
All text by Nanolab staff
Deposition of Al2O3
Aluminium oxide (Alumina, Al2O3) can be deposited by use of ALD (atomic layer deposition), by e-beam evaporation or by sputtering. During the evaporation or sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample.
- Al2O3 deposition using ALD
- Sputter-System(Lesker)
- Sputter-System Metal-Oxide(PC1)
- Evaporation of Al2O3 in E-Beam Evaporator (10-pockets)
Comparison of the methods for deposition of Alumium Oxide
Sputter-System(Lesker) | Sputter-System Metal-Oxide(PC1) | ALD Picosun 200 | 10-pocket e-beam evaporator | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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More info on Al2O3 | ||||
Substrate size |
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Allowed materials |
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