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Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions

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Created page with "{| border="1" style="text-align: center;" |- |colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for Crystal thickness monitor 1''' |- !scope..."
 
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]'''
===As the system is not being used for deposition this information is no long relevant===
It is being kept in case we will start up the deposition again.<br>
<!-- [[Image:Tooling_factor.jpg|700px|right|thumb|How to calculate the tooling factor. Taken from the manufacture manual]] -->
{| border="1" style="text-align: center;"
|-style="background:Black; color:White"
|colspan="6" style="text-align: center;" | '''Material parameters for using the crystal monitors'''
|-
!scope="row" |Material
!Density
!Z ratio
|-
|-
|TiO<sub>2</sub>
|4.260
|0.400
|-
|-
|SiO<sub>2</sub>
|2.648
|1.000
|-
|-
|Si
|2.320
|0.712
|}
{| border="1" style="text-align: center;"
{| border="1" style="text-align: center;"
|-
|-
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|-
|-
!22-7-2014
!2014-07-22
|1.573 (wafer center)
|157.3% (wafer center)
|
|
|
|
|-
|-
|-
|-
!B
!2015-09-08
|B1
|132 %
|B2
|B2
|B3
|B3
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{| border="1" style="text-align: center; width: 320px; height: 200px;"
 
{| border="1" style="text-align: center;"
|-
|-


|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for Crystal thickness monitor 2'''
|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for crystal thickness monitor 2'''


|-
|-
!scope="row" |&nbsp;
!scope="row" |Date
!|1
!|Tooling factor: TiO<sub>2</sub>
!|2
!|Tooling factor: SiO<sub>2</sub>
!|3
!|Tooling factor: Si
!|4
!|5
 
|-
|-


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|A2
|A2
|A3
|A3
|A4
|A5
|-
|-
|-
|-
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|B2
|B2
|B3
|B3
|B4
 
|B5
|-
|-
|-
|-
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|C2
|C2
|C3
|C3
|C4
 
|C5
|-
|-
!D
!D
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|D2
|D2
|D3
|D3
|D4
 
|D5
|}
|}

Latest revision as of 15:57, 4 September 2025

Feedback to this page: click here

As the system is not being used for deposition this information is no long relevant

It is being kept in case we will start up the deposition again.


Material parameters for using the crystal monitors
Material Density Z ratio
TiO2 4.260 0.400
SiO2 2.648 1.000
Si 2.320 0.712


Settings for Crystal thickness monitor 1
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
2014-07-22 157.3% (wafer center)
2015-09-08 132 % B2 B3
C C1 C2 C3
D D1 D2 D3


Settings for crystal thickness monitor 2
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
A A1 A2 A3
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3
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