Specific Process Knowledge/Thin film deposition/Deposition of Silver: Difference between revisions

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<br clear="all" />
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== Sputter deposition of Silver ==
== Sputter deposition of Silver ==


* [[/Sputter rates for Ag PVD co-sputter/evaporation|Sputter deposition of Silver in PVD so-sputter/evaporation]].
* [[/Sputter Ag in Wordentec|Sputter deposition of Silver in Wordentec]].
* [[/Sputter Ag in Wordentec|Sputter deposition of Silver in Wordentec]].


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* [[/Deposition of Silver|Thermal deposition of Silver in Wordentec]]  
* [[/Deposition of Silver|Thermal deposition of Silver in Wordentec]]  


* [[/Deposition of Silver in Thermal Evaporator|Thermal deposition of Silver in the Thermal Evaporator]]


 
==Comparison of deposition equipment for silver==
{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
|-style="background:silver; color:black"
|-style="background:silver; color:black"


!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
 
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
| E-beam deposition of Ag
| E-beam deposition of Ag (line-of-sight, very good thickness uniformity)
| Thermal deposition of Ag
| Thermal deposition of Ag (line-of-sight)
| E-beam deposition of Ag
| Thermal deposition of Ag (line-of-sight, good thickness uniformity)
| Sputter deposition of Ag
| Sputter deposition of Ag (some step coverage, should have good uniformity)
| Sputter deposition of Ag
| Sputter deposition of Ag (some step coverage)
 
| Sputter deposition of Ag including pulsed DC and HiPIMS
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"


! Pre-clean
! Pre-clean
|RF Ar clean
| Ar ion etch (only in E-beam evaporator Temescal)
|RF Ar clean
| none
|RF Ar clean
| none
|RF Ar clean  
| none
|RF Ar clean  
| RF Ar clean  
 
| RF Ar clean  
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
Line 55: Line 57:
! Layer thickness
! Layer thickness
|10Å to 1µm*
|10Å to 1µm*
|10Å to 0.5µm (0.5µm not on all wafers)
|10Å to 0.5µm **
|10Å to 1000Å
|10Å to 0.5µm **(0.5µm not on all wafers)
|10Å to about 5000Å
|10Å to about 3000Å  
|10Å to about 3000Å  
|10Å to about 2000Å
|10Å to ?
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"


! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|1 to 10Å/s
|1Å/s to 10 Å/s
|5Å/s
|About 1Å/s
|1 to 10Å/s
|Dependent on [[/Sputter rates for Ag PVD co-sputter/evaporation|process parameters]].
|Depending on [[/Sputter Ag in Wordentec|process parameters]] (also written in the logbook).
|Depending on process parameters (see logbook)
|Dependent on process parameters.
|Dependent on process parameters.
|-
|-


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! Batch size
! Batch size
|
|
*Up to 1x4" wafers
*Up to 4x6" wafers or
*Up to 3x8" wafers *** or
*smaller pieces
|
*Up to 1x8" wafer or 1x6" wafer
*Up to 3x4" wafers
*smaller pieces
*smaller pieces
|
|
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*6x4" wafers or
*6x4" wafers or
*24x2" wafers  
*24x2" wafers  
|
*4x6" wafers or
*12x4" wafers or
*12x2" wafers
|
*4x6" wafers or
*12x4" wafers or
*12x2" wafers
|
|
*6x6" wafers or
*6x6" wafers or
Line 93: Line 93:
*24x2" wafers  
*24x2" wafers  


|
*1x6" wafers or
*1x4" wafers or
*smaller pieces
|
*up to 10x6" wafers or
*up to 10x4" wafers or
*many smaller pieces


|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
!Allowed materials
!Allowed materials
|
|
* Silicon
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
*Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
* Silicon oxide
|
* Silicon (oxy)nitride
*Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|-style="background:whitesmoke; color:black"
|-style="background:whitesmoke; color:black"
! Comment
! Comment
|
| Pumpdown approx 20 min. Possible to tilt the wafer to achieve tunable step coverage.
|Only very thin layers.
| Pumpdown approx 15 min.
|Only very thin layers (up to 100nm).
| Only very thin layers. Pumpdown approx 1.5 hours.
|
| Pumpdown approx. 1.5 hours
|
|Load and transfer < 10 minutes
|Load and transfer approx. 12 minutes
|-
|-
|}
|}


'''*''' ''For thicknesses above 200 nm permission is required.''
'''*''' ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk''
 
'''**'''  ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk''
 
'''***'''  ''Please ask responsible staff for 8" wafer holder''

Latest revision as of 14:58, 22 January 2024

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Unless otherwise stated, this page is written by DTU Nanolab internal


Deposition of Silver

Silver can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.


Sputter deposition of Silver

Thermal deposition of Silver

Comparison of deposition equipment for silver

E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) Thermal evaporation (Thermal Evaporator) Thermal evaporation (Wordentec) Sputter deposition (Wordentec) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Ag (line-of-sight, very good thickness uniformity) Thermal deposition of Ag (line-of-sight) Thermal deposition of Ag (line-of-sight, good thickness uniformity) Sputter deposition of Ag (some step coverage, should have good uniformity) Sputter deposition of Ag (some step coverage) Sputter deposition of Ag including pulsed DC and HiPIMS
Pre-clean Ar ion etch (only in E-beam evaporator Temescal) none none none RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm* 10Å to 0.5µm ** 10Å to 0.5µm **(0.5µm not on all wafers) 10Å to about 3000Å 10Å to about 2000Å 10Å to ?
Deposition rate 1 to 10Å/s 5Å/s 1 to 10Å/s Depending on process parameters (also written in the logbook). Dependent on process parameters. Dependent on process parameters.
Batch size
  • Up to 4x6" wafers or
  • Up to 3x8" wafers *** or
  • smaller pieces
  • Up to 1x8" wafer or 1x6" wafer
  • Up to 3x4" wafers
  • smaller pieces
  • 6x6" wafers or
  • 6x4" wafers or
  • 24x2" wafers
  • 6x6" wafers or
  • 6x4" wafers or
  • 24x2" wafers
  • 1x6" wafers or
  • 1x4" wafers or
  • smaller pieces
  • up to 10x6" wafers or
  • up to 10x4" wafers or
  • many smaller pieces
Allowed materials
  • Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
  • Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
  • Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
  • Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
  • Almost any as long as it does not outgas. See cross-contamination sheets in Labmanager.
  • Almost any as long as it does not outgas if you plan to use substrate heating. See cross-contamination sheets in Labmanager.
Comment Pumpdown approx 20 min. Possible to tilt the wafer to achieve tunable step coverage. Pumpdown approx 15 min. Only very thin layers. Pumpdown approx 1.5 hours. Pumpdown approx. 1.5 hours Load and transfer < 10 minutes Load and transfer approx. 12 minutes

* For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk

** For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@nanolab.dtu.dk

*** Please ask responsible staff for 8" wafer holder

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