Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions

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<!--Page reviewed by jmli 9/8-2022  -->
==Etching of Chromium==
==Etching of Chromium==
Etching of chromium is done wet at Danchip. We have two solution for this:


# HNO<math>_3</math>:H<math>_2</math>O:cerisulphate  - 90ml:1200ml:15g
Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.
# Commercial chromium etch
*[[Specific Process Knowledge/Etch/Wet Chromium Etch|Etching of Cr by wet etch]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium|Etching of Cr by ICP metal]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Sputtering of Cr]]
<br clear="all" />


Etch rate 400-1000 Å/min (depending on the level of oxidation of the metal)
==Comparison of Chromium Etch Methods==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-


{| border="1" cellspacing="0" cellpadding="4" align="left"
!
! Chromium etch 1
! Chromium etch 2
|-
|General description
|
Etch of chromium
|
Etch of chronium
|-
|-
|Chemical solution
|-style="background:silver; color:black"
|HNO<math>_3</math>:H<math>_2</math>O:cerisulphate  - 90ml:1200ml:15g
!
|Commercial chromium etch
![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-
|Process temperature
|Room temperature


|Room temperature
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Wet etch of Cr premixed (Chrome etch 18)
|Dry plasma etch of Cr
|Sputtering of Cr - pure physical etch
|-


|-
|-
 
|-style="background:LightGrey; color:black"
|Possible masking materials:
!Etch rate range
|
|
Photoresist (1.5 µm AZ5214E)
*~150nm/min at room temperature
|
|
Photoresist (1.5 µm AZ5214E)
*~14 nm/min (depending on features size and etch load)  
|
*~30nm/min (not tested yet)
|-
 
|-
|-
|Etch rate
|-style="background:WhiteSmoke; color:black"
!Etch profile
|
*Isotropic
|
|
~100 nm/min (Pure Al)
*Anisotropic (vertical sidewalls)
|
|
~60(??) nm/min
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
 
 
|-
|-
|Batch size
|-style="background:LightGrey; color:black"
!Substrate size
|
|
1-25 wafers at a time
*Any size and number that can go inside the beaker in use
|
|
1-25 wafer at a time
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
|
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-
|Size of substrate
 
|-
|-style="background:WhiteSmoke; color:black"
!Allowed materials
|
|
4" wafers
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
4" wafers
|-
|Allowed materials
|
|
*Silicon
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Aluminium
*Silicon
*Titanium
*Silicon Oxide
*Chromium
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
|
|
*Aluminium
*Silicon
*Silicon
*Silicon oxides
*Silicon Oxide
*Silicon nitrides
*Silicon Nitride
*Metals from the +list
*Silicon Oxynitride
*Metals from the -list
*Photoresist
*Alloys from the above list
*E-beam resist
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}

Latest revision as of 16:47, 6 February 2023

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here


Etching of Chromium

Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.


Comparison of Chromium Etch Methods

Cr wet etch ICP metal IBE (Ionfab300+)
Generel description Wet etch of Cr premixed (Chrome etch 18) Dry plasma etch of Cr Sputtering of Cr - pure physical etch
Etch rate range
  • ~150nm/min at room temperature
  • ~14 nm/min (depending on features size and etch load)
  • ~30nm/min (not tested yet)
Etch profile
  • Isotropic
  • Anisotropic (vertical sidewalls)
  • Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size
  • Any size and number that can go inside the beaker in use
  • smaller pieces on a carrier wafer
  • #1 100mm wafers (when set up to 100mm wafers)
  • #1 150mm wafers (when set up to 150mm wafers)

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

  • Silicon
  • Quartz/fused silica
  • Photoresist/e-beam resist
  • PolySilicon,
  • Silicon oxide
  • Silicon (oxy)nitride
  • Aluminium
  • Titanium
  • Chromium
  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape
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