Specific Process Knowledge/Thin film deposition/Deposition of NiV

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Sputtering of Nickel Vanadium

Nickel Vanadium may be sputter deposited in either Sputter-system (Lesker) or Wordentec. The following pages show both process parameters and data on surface roughness of the deposited films

• Sputtering of NiV in Lesker
• Sputtering of NiV in Sputter-System Metal-Oxide (PC1)
• Sputtering of NiV in Wordentec

In the chart below you can compare the different deposition equipment.

	Sputter deposition (Sputter-System Lesker)	Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))	Sputter deposition (Wordentec)
General description	Sputter deposition of NiV	Sputter deposition of NiV	Sputter deposition of NiV
Pre-clean	RF Ar clean	RF Ar clean	none
Layer thickness	About 10Å to 5000Å	About 10Å to 5000Å	About 10Å to 5000Å
Deposition rate	Depending on process parameters(normally less than 1 A/sec).	Depending on process parameters(normally less than 1 A/sec).	Depending on process parameters(normally less than 1 A/sec).
Batch size	Pieces or 1x4" wafer or 1x6" wafer	Up to 10x4" or 6" wafers Many smaller pieces	24x2" wafers or 6x4" wafers or 6x6" wafers
Allowed substrates	Silicon wafers Quartz wafers Pyrex wafers(No substrate heating)	Almost any that do not outgas.	Silicon wafers Quartz wafers Pyrex wafers
Allowed materials	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon	Almost any that do not outgas.	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon
Target size	2 inch sputter target	3 inch sputter target (or in special cases 4 inch)	6 inch sputter target
Comment	Sputter target with NiV composition: Ni/V 93/7% Substrate rotation Substrate RF Bias (optional)	Sputter target with NiV composition: Ni/V 93/7% Substrate rotation Substrate RF Bias (optional)	Sputter target with NiV composition: Ni/V 93/7% No substrate rotation No substrate RF Bias