Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE: Difference between revisions
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Etching of Silicon Oxide using AOE | Etching of Silicon Oxide using AOE | ||
{| border="2" cellspacing="2" cellpadding="3 | {| border="2" cellspacing="2" cellpadding="3" | ||
!Parameter | !Parameter | ||
!Si mask | !Si mask | ||
Revision as of 12:31, 6 December 2007
Etching of Silicon Oxide using AOE
| Parameter | Si mask | Resist mask |
|---|---|---|
| Coil Power [W] | 1300 | 1000 |
| Platen Power [W] | 500 | 300 |
| Platen temperature [oC] | 35 | 0 |
| He flow [sccm] | 300 | 174 |
| CF flow [sccm] | 18 | 10 |
| H2 flow [sccm] | 0 | 8 |
| Pressure [mTorr] | 4 | 4 |
| Typical results | Si mask STS result | Si mask DANCHIP result | Resist mask STS result | Resist mask DANCHIP result |
|---|---|---|---|---|
| Etch rate [nm/min] | 500 | 300 | 280 | |
| Selectivity [:1] | 20 | 4 | 3.2 | |
| Profile [o] | >88 | >88 |