Specific Process Knowledge/Characterization/KLA-Tencor Surfscan 6420: Difference between revisions

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!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
*Drive-in of boron
 
*Oxidation of silicon
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*Oxidation of boron phase layer
 
*Annealing of the oxide
|style="background:WhiteSmoke; color:black"|Oxidation:
*Dry
*Wet: with torch (H<sub>2</sub>+O<sub>2</sub>)
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|-
!style="background:silver; color:black" align="center"|Performance
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"| ||style="background:WhiteSmoke; color:black"|
*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (takes too long to make it thicker)
 
*Wet SiO<sub>2</sub>: 50 Å to ~3 µm (takes too long to make it thicker)
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*800-1150 <sup>o</sup>C
*Room temperature
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|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
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|style="background:WhiteSmoke; color:black"|
*1 atm
*1 atm
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|style="background:LightGrey; color:black"|Gasses on the system
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*O<sub>2</sub>, H<sub>2</sub> and N<sub>2</sub>
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates

Revision as of 11:11, 23 April 2013

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KLA-Tencor Surfscan 6420

The image is from the cleanroom at the place it was refurbish in California.

Particles counting of a unpatterned surface. A broad range of particles size from 0.1 µm to greater than 3 µm can be measured on a polished silicon or epitaxial layers. Thin films as e.g. Poly-si, Nitride and thermal Oxide can also be inspected. The system will remove small surface roughness so it not count as a particle.


The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:

LabManager

Overview of the performance of the Surfscan 6420 and some process related parameters

Purpose
Performance
Process parameter range Process Temperature
  • Room temperature
Process pressure
  • 1 atm
Substrates Batch size
  • 1-25 100 mm wafers
  • 1-25 150 mm wafers
Substrate material allowed
  • Silicon wafers (new or RCA cleaned wafers)
  • From A2 furnace directly (e.g. incl. Predep HF)
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