Specific Process Knowledge/Characterization/KLA-Tencor Surfscan 6420: Difference between revisions

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[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=18 LabManager]
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=18 LabManager]


==Equipment performance and process related parameters==
==Overview of the performance of the Surfscan 6420 and some process related parameters==


{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="0"  
 
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>Equipment 1</b>
|style="background:WhiteSmoke; color:black"|<b>Equipment 2</b>
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|  
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Drive-in of boron
*Purpose 1
*Oxidation of silicon
*Purpose 2
*Oxidation of boron phase layer
|style="background:WhiteSmoke; color:black"|
*Annealing of the oxide
*Purpose 1
|style="background:WhiteSmoke; color:black"|Oxidation:
*Purpose 2
*Dry
*Purpose 3
*Wet: with torch (H<sub>2</sub>+O<sub>2</sub>)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|Response 1
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (takes too long to make it thicker)
*Performance range 1
*Wet SiO<sub>2</sub>: 50 Å to ~3 µm (takes too long to make it thicker)
*Performance range 2
|style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 2
*Performance range 3
|-
|-
|style="background:LightGrey; color:black"|Response 2
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|Process Temperature
*Performance range
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range
*800-1150 <sup>o</sup>C
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Parameter 1
|style="background:WhiteSmoke; color:black"|
*Range
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
*1 atm
|-
|-
|style="background:LightGrey; color:black"|Parameter 2
|style="background:LightGrey; color:black"|Gasses on the system
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
 
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub>, H<sub>2</sub> and N<sub>2</sub>
*Range
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*1-25 100 mm wafers  
*<nowiki>#</nowiki> 50 mm wafers
*1-25 150 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers  
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Silicon wafers (new or RCA cleaned wafers)
*Allowed material 2
*From A2 furnace directly (e.g. incl. Predep HF)
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Allowed material 2
*Allowed material 3
|-  
|-  
|}
|}
<br clear="all" />

Revision as of 11:05, 23 April 2013

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KLA-Tencor Surfscan 6420

The image is from the cleanroom at the place it was refurbish in California.

Particles counting of a unpatterned surface. A broad range of particles size from 0.1 µm to greater than 3 µm can be measured on a polished silicon or epitaxial layers. Thin films as e.g. Poly-si, Nitride and thermal Oxide can also be inspected. The system will remove small surface roughness so it not count as a particle.


The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:

LabManager

Overview of the performance of the Surfscan 6420 and some process related parameters

Purpose
  • Drive-in of boron
  • Oxidation of silicon
  • Oxidation of boron phase layer
  • Annealing of the oxide
 Oxidation:
  • Dry
  • Wet: with torch (H2+O2)
Performance Film thickness
  • Dry SiO2: 50 Å to ~2000 Å (takes too long to make it thicker)
  • Wet SiO2: 50 Å to ~3 µm (takes too long to make it thicker)
Process parameter range Process Temperature
  • 800-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • O2, H2 and N2
Substrates Batch size
  • 1-25 100 mm wafers
  • 1-25 150 mm wafers
Substrate material allowed
  • Silicon wafers (new or RCA cleaned wafers)
  • From A2 furnace directly (e.g. incl. Predep HF)
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