Specific Process Knowledge/Etch/Etching of Polymer

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Etching of Polymer

Stripping of polymer is often done by wet chemistry in a solvent that dissolves the given polymer. If wet chemistry cannot be used or a more controlled etch of the polymer is needed a plasma system is used instead. Plasma ashers are designed for removing polymers in primarily oxygen plasmas. It you need a more directional etch with a masking material RIE2 or ASE can be used.

• Polymer Etch by ASE

• Plasma asher 1

• Plasma asher 2

• Etch of Photo Resist using RIE

• Wet Polymer Etch

Comparison of methods for polymer etching

	ASE	Plasma asher 1	Plasma asher 2	RIE2	Wet Polymer Etch
General description	The ASE was originally a dedicated deep Si etcher, but with the arrival of the Pegasus it has now been opened for polymer etching.	The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering af polymers.	The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering af polymers. This plasma asher is for Si wafers without metals.	RIE2 can etch polymers in almost the same way as the ASE. We prefer the you use the ASE but there can be situations where the sample will not be allowed in the ASE (e.g. if there are metal on). If you think you need to use the RIE2 for polymer etching you need to get a special permission from the plasma group, see contact info on the RIE2 page in LabManager.	Wet polymer etch is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks.
Etch direction	Process dependant: Isotropic to anisotropic (vertical to sample surface)	Isotropic	Isotropic	Process dependant: Almost isotropic to anisotropic (vertical to sample surface)	Isotropic
Possible etch reactances	Oxygen plasma Oxygen plasma mixed with CO2 SF6 Ar	Oxygen plasma Oxygen plasma mixed with N2 CF4	Oxygen plasma Oxygen plasma mixed with N2	Oxygen plasma Oxygen plasma mixed with CF4 SF6	The different solvents available at Danchip, such as Acetone 1165 Remover
Substrate size	samples smaller than 100 mm wafers must be glued to a 100 mm wafer or placed in a reces on a 100mm wafer. #1 100 mm wafer #1 150 mm wafer (only when system is set up to 150mm wafers)	# small samples #25 50 mm wafers #25 100 mm wafers #25 150 mm wafer	# small samples #25 50 mm wafers #25 100 mm wafers #25 150 mm wafers	samples smaller that can fit on a 100mm wafer. #1 50 mm wafer #1 100 mm wafer #1 150 mm wafer (only when the system is set up for 150mm wafers).	Any sample # and size that can go into the beaker used.
Allowed materials	Silicon wafers with layers of silicon oxide or silicon (oxy)nitride Photoresist/e-beam resist PolySilicon Aluminium Polymers (list?) Quartz/fused silica wafers Polymer wafers?	Si,SiO2,Si3N4 Glass Metals (no Pb or Te) Resists, polymers	Si,SiO2,Si3N4 Glass Resists, polymers	Silicon wafers with layers of silicon oxide or silicon (oxy)nitride Photoresist/e-beam resist PolySilicon Metals(no Pb and Te) max 5% wafer coverage Polymers (list?) Quartz/fused silica wafers Polymer wafers (only with special allowance)	Any material the may go into the beaker used.