Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions

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Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.
Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.
*[[/Deposition of silicon nitride using LPCVD|Etching of Al by wet etch: 1]]
*[[Specific Process Knowledge/Etch/Wet Aluminium Etch|Etching of Al by wet etch]]
*[[/Deposition of silicon nitride using LPCVD|Etching of Al by wet etch: 2]]
*[[/Deposition of silicon nitride using LPCVD|Etching of Al by dry etch]]
*[[/Deposition of silicon nitride using LPCVD|Etching of Al by dry etch]]
*[[/Deposition of silicon nitride using LPCVD|Etching of Al by sputering]]
*[[/Deposition of silicon nitride using LPCVD|Etching of Al by sputering]]

Revision as of 10:49, 12 March 2013

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Etching of Aluminium

Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.


Comparison methode 1 and methode 2 for the process

Methode 1 Methode 2
Generel description Generel description - methode 1 Generel description - methode 2
Parameter 1
  • A
  • B
  • A
  • B
Parameter 2
  • A
  • B
  • C
  • A
Substrate size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3
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