Revision as of 10:46, 12 March 2013

Feedback to this page: click here

THIS PAGE IS UNDER CONSTRUCTION

Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.

	Methode 1	Methode 2
Generel description	Generel description - methode 1	Generel description - methode 2
Parameter 1	A B	A B
Parameter 2	A B C	A
Substrate size	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers
Allowed materials	Allowed material 1 Allowed material 2	Allowed material 1 Allowed material 2 Allowed material 3

@@ Line 5: / Line 5: @@
 ==Etching of Aluminium==
-Write a short description of the process and how to perform the process.
+Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.
+*[[/Deposition of silicon nitride using LPCVD|Etching of Al by wet etch: 1]]
-*[[/Deposition of silicon nitride using LPCVD|Process description using methode 1]]
+*[[/Deposition of silicon nitride using LPCVD|Etching of Al by wet etch: 2]]
-<!-- Link to the process info page in LabAdviser -->
+*[[/Deposition of silicon nitride using LPCVD|Etching of Al by dry etch]]
+*[[/Deposition of silicon nitride using LPCVD|Etching of Al by sputering]]
-*[[/Deposition of silicon nitride using LPCVD|Process description using methode 2]]
-<!-- Link to the process info page in LabAvdiser -->
 <br clear="all" />