Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions

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The Bosch process uses alternation between an etch cycle and a passivation cycle. In the case of the silicon etching on the ASE, an etch phase with SF<sub>6</sub> and O<sub>2</sub> alternates with a passivation phase with C<sub>4</sub>F<sub>8</sub>.
The Bosch process uses alternation between an etch cycle and a passivation cycle. In the case of the silicon etching on the ASE, an etch phase with SF<sub>6</sub> and O<sub>2</sub> alternates with a passivation phase with C<sub>4</sub>F<sub>8</sub>.


Two recipes have been optimized for the ASE: A shallow etch shallolr and a deep etch deepetch.
Two recipes have been optimized for the ASE:  
* '''Shallolr'''
This shallow etch process will produce a 20 <math>\mu</math>m
 
and a deep etch deepetch. They have been designed
 


=== Specifications of the standard ASE etches ===




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Revision as of 19:19, 25 November 2007

The ICP-DRIE (Inductively Coupled Plasma - Deep Reactive Ion Etcher) tool at Danchip is manufactured by STS and is called the ASE (Advanced Silicon Etcher). The main purpose of the ASE is etching of silicon using Bosch process.

The Bosch process:

The Bosch process uses alternation between an etch cycle and a passivation cycle. In the case of the silicon etching on the ASE, an etch phase with SF6 and O2 alternates with a passivation phase with C4F8.

Two recipes have been optimized for the ASE:

  • Shallolr

This shallow etch process will produce a 20 m

and a deep etch deepetch. They have been designed



The shallolr recipe
Common parameters Multiplexed parameters
Parameter Setting Parameter Etch Passivation
Temperature 10oC SF6 Flow 260 sccm 0 sccm
No. of cycles 31 O2 Flow 26 sccm 0 sccm
Process time 5:56 mins C4F4 Flow 0 sccm 120 sccm
APC mode manual RF coil 2800 W 1000 W
APC setting 86.8 % RF Platen 16 W 0 W
Cycle time 6.5 s 5 s
The deepetch recipe
Common parameters Multiplexed parameters
Parameter Setting Parameter Etch Passivation
Temperature 20oC SF6 Flow 230 sccm 0 sccm
No. of cycles 250 O2 Flow 23 sccm 0 sccm
Process time 54:10 mins C4F4 Flow 0 sccm 120 sccm
APC mode manual RF coil 2800 W 1000 W
APC setting 87.7 % RF Platen 19 W 0 W
Cycle time 8 s 5 s
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