Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
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! colspan="2" align="center"| Common parameters | ! colspan="2" align="center"| Common parameters | ||
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| Pass | | Pass | ||
|- | |- | ||
| C | | Temperature | ||
| | | 10<sup>0</sup>C | ||
| SF<sub>6</sub> Flow | |||
| 230 sccm | |||
| 0 sccm | |||
|- | |- | ||
| E | | E | ||
Revision as of 18:12, 25 November 2007
| Common parameters | Multiplexed parameters | |||
|---|---|---|---|---|
| Parameter | Setting | Parameter | Etch | Pass |
| Temperature | 100C | SF6 Flow | 230 sccm | 0 sccm |
| E | F | |||
| G | ||||
| H | ||||
The ICP-DRIE (Inductively Coupled Plasma - Deep Reactive Ion Etcher) tool at Danchip is manufactured by STS and is called the ASE (Advanced Silicon Etcher). The main purpose of the ASE is etching of silicon using Bosch process.
The Bosch process:
The Bosch process uses alternation between an etch cycle and a passivation cycle. In the case of the silicon etching on the ASE, an etch phase with SF6 and O2 alternates with a passivation phase with C4F8.
Two recipes have been optimized for the ASE: A shallow etch shallolr and a deep etch deepetch.
| Process | Parameter | ! Phase
Etch |
|---|---|---|
| SF6 flow | 32 sccm | |
| O2 flow | 8 sccm | |
| Pressure | 80 mTorr | |
| RF-power | 30 W |
New process
| Column 1 | Column 2 | Column 3 |
|---|---|---|
| A | B | |
| C | D | |
| E | F | |
| G | ||
| H | ||