Specific Process Knowledge/Etch/DRIE-Pegasus/StandardRecipes: Difference between revisions

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(Created page with "== Overview of the standard processes: Processes A, B, C, D and SOI == The instrument was accepted on the basis of the performance of 5 processes. Below is a general compari...")
 
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{| border="2" cellspacing="0" cellpadding="2"
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>Equipment 1</b>
|style="background:WhiteSmoke; color:black"|<b>Equipment 2</b>
|-
!style="background:silver; color:black;" align="center"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Purpose 1
*Purpose 2
|style="background:WhiteSmoke; color:black"|
*Purpose 1
*Purpose 2
*Purpose 3
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Response 1
|style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 2
|style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 2
*Performance range 3
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|style="background:LightGrey; color:black"|Response 2
|style="background:WhiteSmoke; color:black"|
*Performance range
|style="background:WhiteSmoke; color:black"|
*Performance range
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Parameter 1
|style="background:WhiteSmoke; color:black"|
*Range
|style="background:WhiteSmoke; color:black"|
*Range
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|style="background:LightGrey; color:black"|Parameter 2
|style="background:WhiteSmoke; color:black"|
*Range
|style="background:WhiteSmoke; color:black"|
*Range
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Allowed material 2
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Allowed material 2
*Allowed material 3
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Revision as of 12:56, 26 November 2012

Overview of the standard processes: Processes A, B, C, D and SOI

The instrument was accepted on the basis of the performance of 5 processes. Below is a general comparison - to find more detailed information, go the web page for each process

Standard processes on the DRIE-Pegasus
Process name Type Purpose Conditions during original runs Best usage
Feature Mask material Etch load Comments
Process A Bosch Fast etch 80 µm trench Photo resist 12-13 % on 6" wafer
Process B Bosch Fast etch 30 µm diameter via Photo resist 12-13 % on 6" wafer



Equipment Equipment 1 Equipment 2
Purpose
  • Purpose 1
  • Purpose 2
  • Purpose 1
  • Purpose 2
  • Purpose 3
Performance Response 1
  • Performance range 1
  • Performance range 2
  • Performance range 1
  • Performance range 2
  • Performance range 3
Response 2
  • Performance range
  • Performance range
Process parameter range Parameter 1
  • Range
  • Range
Parameter 2
  • Range
  • Range
Substrates Batch size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3