Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Etch slow: Difference between revisions

From LabAdviser
Jump to navigation Jump to search
(New page: =Etch slow= This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min....)
 
Line 2: Line 2:


This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.
This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.
{| border="2" cellspacing="2" cellpadding="3"
!Parameter
!Si etch first try
|-
|Neutalizer current [mA]
|450
|-
|RF Power [W]
|1200
|-
|Beam current [mA]
|400
|-
|Beam voltage [V]
|400
|-
|Beam accelerator voltage
|400
|-
|Ar flow to neutralizer [sccm]
|6.0
|-
|Ar flow to beam [sccm]
|6.0
|-
|Rotation speed [rpm]
|20
|-
|Stage angle [degrees]
|10
|-
|Platen temp.  [dg. Celcius]
|15
|-
|He cooling pressure [mTorr]
|37.5
|-
|Results
|vvv
|-
|etch time [min]
|40
|-
|Etch rate in Si [nm/min]
|19.7
|-
|Total time in Acetone + ultrasound [min]
|17
|-
|Was the resist completely removed after acetone + ultrasound?
|no
|-
|}

Revision as of 10:47, 31 July 2012

Etch slow

This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.

Parameter Si etch first try
Neutalizer current [mA] 450
RF Power [W] 1200
Beam current [mA] 400
Beam voltage [V] 400
Beam accelerator voltage 400
Ar flow to neutralizer [sccm] 6.0
Ar flow to beam [sccm] 6.0
Rotation speed [rpm] 20
Stage angle [degrees] 10
Platen temp. [dg. Celcius] 15
He cooling pressure [mTorr] 37.5
Results vvv
etch time [min] 40
Etch rate in Si [nm/min] 19.7
Total time in Acetone + ultrasound [min] 17
Was the resist completely removed after acetone + ultrasound? no
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Etch_slow&oldid=6320"