Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2: Difference between revisions
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==Other results== | |||
===Roughness of the surface=== | |||
Measured with the Optical profiler - PSI mode (on one sample from the acceptace test): Sa= 0.6nm |
Revision as of 11:44, 5 March 2012
Acceptance test for SiO2 deposition:
. | Acceptance Criteria |
Acceptance Result 1 |
Acceptance Result 2 |
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Substrate information |
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Material to be deposited |
The purpose of the SiO2 is to be part of a mirror: <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Extra quarterwavelength layer of <br\> TiO2 <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Design wavelength (for refractive indices and layer thicknesses): 1300nm <br\> The acceptance criteria is set up for the single SiO2 and TiO2 layers. <br\> Five runs in a row for each material. |
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Deposition thickness |
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Deposition rate |
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One standard deviation |
Only made once |
Thickness uniformity |
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Reproducibility |
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Stress |
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Other results
Roughness of the surface
Measured with the Optical profiler - PSI mode (on one sample from the acceptace test): Sa= 0.6nm