Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2: Difference between revisions
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|style="background:WhiteSmoke; color:black"|'''Acceptance Criteria''' | |style="background:WhiteSmoke; color:black"|'''Acceptance Criteria''' | ||
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''' | '''Acceptance Result 1''' | ||
''' | | | ||
'''Acceptance Result 2''' | |||
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!style="background:silver; color:black;" align="left"|Substrate information | !style="background:silver; color:black;" align="left"|Substrate information | ||
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*100 mm SSP Si wafer | *100 mm SSP Si wafer | ||
*525+-25 µm thick | *525+-25 µm thick | ||
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*100 mm SSP Si wafer | |||
*525+-25 µm thick | |||
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!style="background:silver; color:black" align="left" valign="top" |Material to be deposited | !style="background:silver; color:black" align="left" valign="top" |Material to be deposited | ||
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The acceptance criteria is set up for the single SiO2 and TiO2 layers. <br\> | The acceptance criteria is set up for the single SiO2 and TiO2 layers. <br\> | ||
Five runs in a row for each material. | Five runs in a row for each material. | ||
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*SiO2 | |||
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*SiO2 | *SiO2 | ||
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*222nm | *222nm | ||
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*~ | *~215nm | ||
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*224nm | |||
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!style="background:silver; color:black" align="left" valign="top"|Deposition rate | !style="background:silver; color:black" align="left" valign="top"|Deposition rate | ||
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*6 nm/min | *6 nm/min | ||
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* | *7.42nm/min +- 0.04nm/min | ||
One standard deviation | |||
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*7.73nm/min | |||
Only made once | |||
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!style="background:silver; color:black" align="left" valign="top"|Thickness uniformity | !style="background:silver; color:black" align="left" valign="top"|Thickness uniformity | ||
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* <+-1% | * <+-1% | ||
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*+-(0. | *+-(0.46% +-0.10%) | ||
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*+-0.45% | |||
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!style="background:silver; color:black" align="left" valign="top"|Reproducibility | !style="background:silver; color:black" align="left" valign="top"|Reproducibility | ||
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*<+-1.5% | *<+-1.5% | ||
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*+- | *+-0.6% | ||
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*Not measured | |||
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!style="background:silver; color:black" align="left" valign="top"|Stress | !style="background:silver; color:black" align="left" valign="top"|Stress | ||
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*<500MPa | *<500MPa | ||
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* | *~600MPa | ||
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*475MPa | |||
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Revision as of 15:37, 27 February 2012
Acceptance test for SiO2 deposition:
. | Acceptance Criteria |
Acceptance Result 1 |
Acceptance Result 2 |
---|---|---|---|
Substrate information |
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Material to be deposited |
The purpose of the SiO2 is to be part of a mirror: <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Extra quarterwavelength layer of <br\> TiO2 <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Design wavelength (for refractive indices and layer thicknesses): 1300nm <br\> The acceptance criteria is set up for the single SiO2 and TiO2 layers. <br\> Five runs in a row for each material. |
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Deposition thickness |
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Deposition rate |
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One standard deviation |
Only made once |
Thickness uniformity |
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Reproducibility |
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Stress |
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