Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2: Difference between revisions
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(New page: '''Acceptance test for SiO2 deposition:''' {| border="2" cellspacing="0" cellpadding="2" |- !style="background:silver; color:black;" align="left"|. |style="background:WhiteSmoke; color:b...) |
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*SiO2 | *SiO2 | ||
The purpose of the SiO2 is to be part of a mirror: | The purpose of the SiO2 is to be part of a mirror: <br\> | ||
5 quarterwavelength pairs of | 5 quarterwavelength pairs of <br\> | ||
SiO2 | SiO2 <br\> | ||
TiO2 | TiO2 <br\> | ||
Extra quarterwavelength layer of | Extra quarterwavelength layer of <br\> | ||
TiO2 | TiO2 <br\> | ||
5 quarterwavelength pairs of | 5 quarterwavelength pairs of <br\> | ||
SiO2 | SiO2 <br\> | ||
TiO2 | TiO2 <br\> | ||
Design wavelength (for refractive indices and layer thicknesses): 1300nm | Design wavelength (for refractive indices and layer thicknesses): 1300nm <br\> | ||
The acceptance criteria is set up for the single SiO2 and TiO2 layers. | The acceptance criteria is set up for the single SiO2 and TiO2 layers. <br\> | ||
Five runs in a row for each material. | |||
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*SiO2 | *SiO2 |
Revision as of 15:28, 27 February 2012
Acceptance test for SiO2 deposition:
. | Acceptance Criteria |
Preliminary Results |
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Substrate information |
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Material to be deposited |
The purpose of the SiO2 is to be part of a mirror: <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Extra quarterwavelength layer of <br\> TiO2 <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Design wavelength (for refractive indices and layer thicknesses): 1300nm <br\> The acceptance criteria is set up for the single SiO2 and TiO2 layers. <br\> Five runs in a row for each material. |
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Deposition thickness |
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Deposition rate |
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Thickness uniformity |
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Reproducibility |
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Stress |
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