Specific Process Knowledge/Etch/DRIE-Pegasus/processD: Difference between revisions
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Mask information | |||
* 1 µm of spin coated AZ5214E photoresist, no hardbake | |||
* Patterned by UV lithography with the ‘Travka 50’ mask | |||
* 50 % etch load | |||
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|+ '''Process D specifications''' | |+ '''Process D specifications''' | ||
Revision as of 14:21, 5 July 2011
Mask information
- 1 µm of spin coated AZ5214E photoresist, no hardbake
- Patterned by UV lithography with the ‘Travka 50’ mask
- 50 % etch load
| Parameter | Specification | Average result |
|---|---|---|
| Etch rate (µm/min) | Not specified | 2.88 |
| Etched depth (µm) | 20-30 | 28.75 |
| Scallop size (nm) | < 30 | 46 |
| Profile (degs) | 85 +/- 5 | 89.7 |
| Selectivity to AZ photoresist | Not specified | 50 |
| Undercut (nm) | Not specified | 65 |
| Uniformity (%) | < 3.5 | 4.56-0.25 |
| Repeatability (%) | <4 |
| Main etch (D->E) | Etch | Dep |
|---|---|---|
| Gas flow (sccm) | SF6 275 O2 5 | C4F8 150 |
| Cycle time (secs) | 2.4 | 2.0 |
| Pressure (mtorr) | 26 | 20 |
| Coil power (W) | 2500 | 2000 |
| Platen power (W) | 35 | 0 |
| Cycles | 110 (process time 08:04) | |
| Common | Temperature 0 degs, HBC 10 torr, Long funnel, with baffle & 100 mm spacers | |