Specific Process Knowledge/Etch/DRIE-Pegasus/processD: Difference between revisions

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{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Process A specifications'''
|+ '''Process D specifications'''
|-
|-
! Parameter
! Parameter
Line 8: Line 8:
! Etch rate (µm/min)   
! Etch rate (µm/min)   
| Not specified
| Not specified
| 18.9
| 2.88
|-
|-
! Etched depth (µm)
! Etched depth (µm)
| 150
| 20-30
| 189.1
| 28.75
|-
|-
! Scallop size (nm)
! Scallop size (nm)
| < 800
| < 30
| 718
| 46
|-
|-
! Profile (degs)
! Profile (degs)
| 91 +/- 1
| 85 +/- 5
| 91.1
| 89.7
|-
|-
! Selectivity to AZ photoresist  
! Selectivity to AZ photoresist  
| > 150
| Not specified
| 310
| 50
|-
|-
! Undercut (µm)
! Undercut (nm)
| <1.5
| Not specified
| 0.84
| 65
|-
|-
! Uniformity (%)
! Uniformity (%)
| < 3.5
| < 3.5
| 3.0
| 4.56-0.25
|-
|-
! Repeatability (%)
! Repeatability (%)
| <4
| <4
| 0.43
|  
|-
|-
|}
|}

Revision as of 14:19, 5 July 2011

Process D specifications
Parameter Specification Average result
Etch rate (µm/min) Not specified 2.88
Etched depth (µm) 20-30 28.75
Scallop size (nm) < 30 46
Profile (degs) 85 +/- 5 89.7
Selectivity to AZ photoresist Not specified 50
Undercut (nm) Not specified 65
Uniformity (%) < 3.5 4.56-0.25
Repeatability (%) <4



Process D recipe
Main etch (D->E) Etch Dep
Gas flow (sccm) SF6 275 O2 5 C4F8 150
Cycle time (secs) 2.4 2.0
Pressure (mtorr) 26 20
Coil power (W) 2500 2000
Platen power (W) 35 0
Cycles 110 (process time 08:04)
Common Temperature 0 degs, HBC 10 torr, Long funnel, with baffle & 100 mm spacers
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