Specific Process Knowledge/Etch: Difference between revisions

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== Choose material to be etched ==
== Choose material to be etched ==
[[:File:Copy of 180612_ III-V_exoticall_MH (2).xlsx | Dry etching of III-V materials and exotic materials in some other European Cleanroom facility]]
[http://labmanager.dtu.dk/view_binary.php?class=MiscDocument&id=2&name=180612_III-V_exoticall_MH.xlsx Dry etching of III-V materials and exotic materials in some other European Cleanroom facility login required]  


{| {{table}}
{| {{table}}
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*[[/Aluminum Oxide|Aluminum Oxide]]
*[[/Aluminum Oxide|Aluminum Oxide]]
*[[/Etching of Bulk Glass|Bulk Glass]] - ''Borofloat (pyrex) and fused silica (quartz)''
*[[/Etching of Bulk Glass|Bulk Glass]] - ''Borofloat (pyrex) and fused silica (quartz)''
*[[/Lithium niobate |Lithium niobate]]
|style="background: #DCDCDC"|
|style="background: #DCDCDC"|
*[[/Etching of Silicon|Silicon]]
*[[/Etching of Silicon|Silicon]]
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*[[/Etching of Gold|Gold]]  
*[[/Etching of Gold|Gold]]  
*[[/Etching of Platinum|Platinum]]
*[[/Etching of Platinum|Platinum]]
*[[/Etching of Molybdenum|Molybdenum]]
*[[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch|Magnetic stack]] - ''containing Ta/MnIr/NiFe''
*[[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch|Magnetic stack]] - ''containing Ta/MnIr/NiFe''
|style="background: #DCDCDC"|
|style="background: #DCDCDC"|
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*[[/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]]
*[[/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]]
*[[/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]]
*[[/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]]
*[[/DRIE-Pegasus| DRIE-Pegasus systems]]  
*[[/DRIE-Pegasus| DRIE-Pegasus systems:]]  
**[[/DRIE-Pegasus/Pegasus-1| DRIE-Pegasus 1 (Si etching on 4" wafers)]]
**[[/DRIE-Pegasus/Pegasus-1| DRIE-Pegasus 1 (Si etching on 4" wafers)]]
**[[/DRIE-Pegasus/Pegasus-2| DRIE-Pegasus 2 (Tool dedicated to research)]]
**[[/DRIE-Pegasus/Pegasus-2| DRIE-Pegasus 2 (Dedicated for research applications)]]
**[[/DRIE-Pegasus/Pegasus-3| DRIE-Pegasus 3 (Si etching on 150 mm wafers)]]
**[[/DRIE-Pegasus/Pegasus-3| DRIE-Pegasus 3 (Si etching on 150 mm wafers)]]
**[[/DRIE-Pegasus/Pegasus-4| DRIE-Pegasus 4 (Etching of silicon based dielectrics on 150 mm wafers)]]
**[[/DRIE-Pegasus/Pegasus-4| DRIE-Pegasus 4 (Etching of silicon based dielectrics on 150 mm wafers)]]
*[[/ICP Metal Etcher|ICP Metal Etch]]
*[[/ICP Metal Etcher|ICP Metal Etch]]
*[[/III-V ICP|III-V ICP]]
*[[/III-V ICP|III-V ICP]]
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*[[/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
*[[/IBE&frasl;IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
|style="background: #DCDCDC"|
|style="background: #DCDCDC"|
*[[/Overview of chemicals|Overview of Chemicals]]
*[[/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
*[[/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
*[[/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]]
*[[/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]]

Latest revision as of 14:46, 28 March 2025

The contents on this page, including all images and pictures, was created by DTU Nanolab staff unless otherwise stated.

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Wet etch or dry etch

Etching at Nanolab Fabrication can be done either with wet chemistry or in dry etch equipment. In general wet chemistry etches isotropically in most materials were as dry etch techniques can be optimized to transfer a given mask pattern with vertical sidewalls (anisotropically) to a given substrate.

Advantages of wet chemistry over dry etch techniques are:

  • An often high etch rate difference of different materials giving raise to a high selectivity of the material to be etched compared to underlaying layers or mask materials.
  • Time saving: You can often etch 25 wafers at a time in wet chemistry where as dry etch equipment can only handle one wafer at a time.
  • Easy to start up new etch solutions.

Advantages of dry etch over wet chemistry:

  • Anisotropic etch can be done.
  • The etch does not attack the backside of the sample.

Dry etch Tool Package Training

Choose material to be etched

Dry etching of III-V materials and exotic materials in some other European Cleanroom facility login required

Dielectrica Semicondutors Metals Alloys Polymers
  • No results, use IBE

Choose Method/Equipment for the Etch

A Dry Etch Equipment A Wet Etch