Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
(31 intermediate revisions by 2 users not shown) | |||
Line 4: | Line 4: | ||
==Annealing== | ==Annealing== | ||
At DTU Nanolab we have five furnaces and | At DTU Nanolab we have five furnaces and two RTP (rapid thermal processor) that can be used for annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, RTP2 Jipelec and RTP Annealsys (last one, reserved to research). Annealing normally takes place in an N<sub>2</sub> atmosphere, or it can be done in H<sub>2</sub> or a H<sub>2</sub>-N<sub>2</sub> gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate. | ||
A 20 | A 20-minute N<sub>2</sub> annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation. | ||
==Comparison of the annealing furnaces== | ==Comparison of the annealing furnaces== | ||
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" | {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" | ||
|- | |- | ||
Line 21: | Line 22: | ||
! | ! | ||
[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] | [[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] | ||
! | |||
[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing|Resist Pyrolysis (research tool)]] | |||
! | ! | ||
[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]] | [[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]] | ||
! | ! | ||
[[ | [[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys| RTP Annealsys (research tool)]] | ||
|- | |- | ||
Line 32: | Line 35: | ||
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4. | |Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4. | ||
|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | |Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | ||
|Annealing of wafers with Al and ALD deposited | |Annealing of wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> | ||
|Resist pyrolysis | |||
|Rapid thermal processing, usually, annealing (RTA). | |Rapid thermal processing, usually, annealing (RTA). | ||
| | |Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation). | ||
|- | |- | ||
Line 46: | Line 50: | ||
| | | | ||
*N<sub>2</sub> | *N<sub>2</sub> | ||
*(Forming gas, 5% H<sub>2</sub>/95% N<sub>2</sub> - Being tested) | |||
| | |||
*N<sub>2</sub> | |||
*(H<sub>2</sub>-N<sub>2</sub> gas mixture) | |||
*Vacuum is possible | |||
| | | | ||
*Ar | *Ar | ||
Line 51: | Line 60: | ||
*Low vacuum is possible (min. 2/3 mbar) | *Low vacuum is possible (min. 2/3 mbar) | ||
| | | | ||
* | *Ar | ||
* | *NH<sub>3</sub> | ||
*H<sub>2</sub> | *O<sub>2</sub> | ||
*5% H<sub>2</sub>/Ar | |||
*High vacuum is possible (10<sup>-6</sup> mbar) | |||
|- | |- | ||
Line 65: | Line 75: | ||
*700 <sup>o</sup>C - 1150 <sup>o</sup>C | *700 <sup>o</sup>C - 1150 <sup>o</sup>C | ||
| | | | ||
* | *350 <sup>o</sup>C - 1150 <sup>o</sup>C | ||
*Max 500 <sup>o</sup>C for wafers and samples with Al | |||
| | |||
*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨ | |||
*No vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C | |||
| | | | ||
*20 <sup>o</sup>C - 1200 <sup>o</sup>C | *20 <sup>o</sup>C - 1200 <sup>o</sup>C | ||
Line 71: | Line 85: | ||
* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor''' | * '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor''' | ||
| | | | ||
* | *700 <sup>o</sup>C - 1200 <sup>o</sup>C | ||
* | *Max. 150 <sup>o</sup>C/s | ||
|- | |- | ||
Line 79: | Line 93: | ||
!Substrate and Batch size | !Substrate and Batch size | ||
| | | | ||
*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
*1-30 150 mm | *1-30 150 mm wafer | ||
*(Small samples on a carrier wafer, horizontal) | |||
| | | | ||
*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
*Small samples on a carrier wafer, horizontal | |||
| | | | ||
*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
*1 150 mm wafer | |||
*Small samples on a carrier wafer, horizontal | |||
| | |||
*1-30 50 mm, 100 mm or 150 mm wafers | |||
*Small samples on a carrier wafer, horizontal | |||
| | | | ||
*Single-wafer process | *Single-wafer process | ||
Line 95: | Line 114: | ||
*50 mm, 100 mm or 150 mm wafers | *50 mm, 100 mm or 150 mm wafers | ||
| | | | ||
* | *Single-wafer process | ||
*Chips on carrier | |||
*100 mm or 150 mm wafers | |||
|- | |- | ||
Line 108: | Line 127: | ||
*All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3. | *All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3. | ||
| | | | ||
*Wafers with Al | *Wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> | ||
| | |||
*Samples for resist pyrolysis. | |||
*No metals allowed | |||
| | | | ||
*Silicon | *Silicon | ||
*Silicon oxides and nitrides | *Silicon oxides and nitrides | ||
*Quartz | *Quartz | ||
*Metals - ask for | *Metals - ask for permission | ||
*III-V materials - below 440 °C, otherwise it can lead to outgassing of toxic gases. | *III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases. | ||
| | | | ||
* | *Silicon | ||
* | *Silicon Nitride | ||
* | *Aluminum Oxide | ||
|- | |- | ||
|} | |} | ||
<br clear="all" /> | <br clear="all" /> |
Latest revision as of 15:12, 7 November 2024
Feedback to this page: click here
This page is written by DTU Nanolab internal
Annealing
At DTU Nanolab we have five furnaces and two RTP (rapid thermal processor) that can be used for annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, RTP2 Jipelec and RTP Annealsys (last one, reserved to research). Annealing normally takes place in an N2 atmosphere, or it can be done in H2 or a H2-N2 gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.
A 20-minute N2 annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.
Comparison of the annealing furnaces
General description | Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4. | Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | Annealing of wafers and samples with Al and ALD deposited AL2O3 and TiO2 | Resist pyrolysis | Rapid thermal processing, usually, annealing (RTA). | Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation). |
---|---|---|---|---|---|---|
Annealing gas |
|
|
|
|
|
|
Process temperature |
|
|
|
|
|
|
Substrate and Batch size |
|
|
|
|
|
|
Allowed materials |
|
|
|
|
|
|