Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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|<!-- '''Recipe name''' --> '''CHF3_t1''' <br> | |<!-- '''Recipe name''' --> '''CHF3_t1''' <br> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 800W <br> Platen= 15W <br> Press= 2.5mTorr <br> Temp= 20°C <br> | ||
|<!--Process time--> 2:30 | |<!--Process time--> 2:30 | ||
|<!--'''Date'''--> 29/02/2024 | |<!--'''Date'''--> 29/02/2024 | ||
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|<!-- '''Recipe name''' --> '''CHF3_t2''' | |<!-- '''Recipe name''' --> '''CHF3_t2''' <br> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= '''45W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br> | ||
|<!--'''Process time'''--> 5:00 | |<!--'''Process time'''--> 5:00 | ||
|<!--'''Date'''--> 12/09/2023 | |<!--'''Date'''--> 12/09/2023 | ||
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|<!-- '''Recipe name''' --> '''CF4lowCP''' | |<!-- '''Recipe name''' --> '''CF4lowCP''' <br> CF<sub>4</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= '''45W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br> | ||
|<!--'''Process time'''--> 5:00 | |<!--'''Process time'''--> 5:00 | ||
|<!--'''Date'''--> 29/02/2024 | |<!--'''Date'''--> 29/02/2024 |
Revision as of 16:21, 18 March 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
TEST OF TABLES DESIGN (WORK ON GOING):
SiN tests