Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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|-style="background:white; color:black" | |-style="background:white; color:black" | ||
|<!-- '''Recipe name''' --> '''CF4lowCP''' | |<!-- '''Recipe name''' --> '''CF4lowCP''' | ||
|<!-- '''SiO2 before etch''' --> CF<sub>4</sub>= | |<!-- '''SiO2 before etch''' --> CF<sub>4</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= '''45W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br> | ||
|<!--'''Process time'''--> 5:00 | |<!--'''Process time'''--> 5:00 | ||
|<!--'''Date'''--> 29/02/2024 | |<!--'''Date'''--> 29/02/2024 |
Revision as of 15:42, 18 March 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
TEST OF TABLES DESIGN (WORK ON GOING):
SiN tests
Recipe | Recipe parameters | Duration (min) | Date | SEM picture | Redeposition - top view | Etch rate in SiO2 | Etch rate in resist (AZ5214E inverse) |
Selectivity (SiO2:resist) |
---|---|---|---|---|---|---|---|---|
CHF3_t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
2:30 | 29/02/2024 | nm/min +/- % |
nm/min +/- % |
|||
CHF3_t2 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 45W Press= 2.5mTorr Temp= 20°C |
5:00 | 12/09/2023 | nm/min +/- % |
nm/min +/- % |
|||
CF4lowCP | CF4= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 45W Press= 2.5mTorr Temp= 20°C |
5:00 | 29/02/2024 | nm/min +/- % |
nm/min +/- % |
|||