Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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! '''SEM picture''' | ! '''SEM picture''' | ||
! '''Redeposition - top view''' | ! '''Redeposition - top view''' | ||
! '''Etch rate in SiO2''' | ! '''Etch rate in SiO2''' | ||
! '''Etch rate in resist <br> (AZ5214E inverse)''' | ! '''Etch rate in resist <br> (AZ5214E inverse)''' | ||
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|<!--'''SEM picture'''--> | |<!--'''SEM picture'''--> | ||
|<!--'''Redeposition - top view'''--> | |<!--'''Redeposition - top view'''--> | ||
|<!--'''Etch rate in SiO2'''--> nm/min <br> +/- % | |<!--'''Etch rate in SiO2'''--> nm/min <br> +/- % | ||
|<!--'''Etch rate in resist'''--> nm/min <br> +/- % | |<!--'''Etch rate in resist'''--> nm/min <br> +/- % | ||
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|<!--'''SEM picture'''--> | |<!--'''SEM picture'''--> | ||
|<!--'''Redeposition - top view'''--> | |<!--'''Redeposition - top view'''--> | ||
|<!--'''Etch rate in SiO2'''--> | |<!--'''Etch rate in SiO2'''--> | ||
|<!--'''Etch rate in resist'''--> | |<!--'''Etch rate in resist'''--> | ||
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|<!--'''SEM picture'''--> [[File:CHF310 H2 10min 08.png|200px]] | |<!--'''SEM picture'''--> [[File:CHF310 H2 10min 08.png|200px]] | ||
|<!--'''Redeposition - top view'''--> [[File:CHF310 H2 10min af PA top 01.png|200px]] | |<!--'''Redeposition - top view'''--> [[File:CHF310 H2 10min af PA top 01.png|200px]] | ||
|<!--'''Etch rate in SiO2'''--> 59,6 nm/min <br> +/- 12.9% | |<!--'''Etch rate in SiO2'''--> 59,6 nm/min <br> +/- 12.9% | ||
|<!--'''Etch rate in resist'''--> 47,5 nm/min <br> +/- 21.5% | |<!--'''Etch rate in resist'''--> 47,5 nm/min <br> +/- 21.5% | ||
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|<!--'''SEM picture'''--> | |<!--'''SEM picture'''--> | ||
|<!--'''Redeposition - top view'''--> | |<!--'''Redeposition - top view'''--> | ||
|<!--'''Etch rate in SiO2'''--> | |<!--'''Etch rate in SiO2'''--> | ||
|<!--'''Etch rate in resist'''--> | |<!--'''Etch rate in resist'''--> | ||
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|<!--'''SEM picture'''--> [[File:CHF3=22.5 H2 10min C 01.png|200px]] | |<!--'''SEM picture'''--> [[File:CHF3=22.5 H2 10min C 01.png|200px]] | ||
|<!--'''Redeposition - top view'''--> [[File:CHF3.t1 22.5H2 10min af PA 02.png|200px]] | |<!--'''Redeposition - top view'''--> [[File:CHF3.t1 22.5H2 10min af PA 02.png|200px]] | ||
|<!--'''Etch rate in SiO2'''--> 47,3 nm/min <br> +/- 12% | |<!--'''Etch rate in SiO2'''--> 47,3 nm/min <br> +/- 12% | ||
|<!--'''Etch rate in resist'''--> 26,4 nm/min <br> +/- 17,4% | |<!--'''Etch rate in resist'''--> 26,4 nm/min <br> +/- 17,4% | ||
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|<!--'''SEM picture'''--> | |<!--'''SEM picture'''--> | ||
|<!--'''Redeposition - top view'''--> | |<!--'''Redeposition - top view'''--> | ||
|<!--'''Etch rate in SiO2'''--> | |<!--'''Etch rate in SiO2'''--> | ||
|<!--'''Etch rate in resist'''--> | |<!--'''Etch rate in resist'''--> | ||
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|<!--'''SEM picture'''--> [[File:CHF3 3535H2 10min E 01.png|200px]] | |<!--'''SEM picture'''--> [[File:CHF3 3535H2 10min E 01.png|200px]] | ||
|<!--'''Redeposition - top view'''--> [[File:CHF3 35.35H2 10min af PA 01.png|200px]] | |<!--'''Redeposition - top view'''--> [[File:CHF3 35.35H2 10min af PA 01.png|200px]] | ||
|<!--'''Etch rate in SiO2'''--> 42 nm/min <br> +/- 15.4% | |<!--'''Etch rate in SiO2'''--> 42 nm/min <br> +/- 15.4% | ||
|<!--'''Etch rate in resist'''--> 23,8 nm/min <br> +/- 22.2% | |<!--'''Etch rate in resist'''--> 23,8 nm/min <br> +/- 22.2% | ||
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|<!--'''SEM picture'''--> [[File:CHF3.t1 22.5CF4 10min C 01.png|200px]] | |<!--'''SEM picture'''--> [[File:CHF3.t1 22.5CF4 10min C 01.png|200px]] | ||
|<!--'''Redeposition - top view'''--> [[File:CHF3 22.5CF4 10min af PA 01.png|200px]] | |<!--'''Redeposition - top view'''--> [[File:CHF3 22.5CF4 10min af PA 01.png|200px]] | ||
|<!--'''Etch rate in SiO2'''--> 75,8 nm/min <br> +/- 13.1% | |<!--'''Etch rate in SiO2'''--> 75,8 nm/min <br> +/- 13.1% | ||
|<!--'''Etch rate in resist'''--> 74,9 nm/min <br> +/- 10.8% | |<!--'''Etch rate in resist'''--> 74,9 nm/min <br> +/- 10.8% | ||
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|<!--'''SEM picture'''--> [[File:CHF3.t122.5H2 25mT 10m C 04.png|200px]] | |<!--'''SEM picture'''--> [[File:CHF3.t122.5H2 25mT 10m C 04.png|200px]] | ||
|<!--'''Redeposition - top view'''--> [[File:CHF3 22.5H2 25mT 10mn af PA 01.png|200px]] | |<!--'''Redeposition - top view'''--> [[File:CHF3 22.5H2 25mT 10mn af PA 01.png|200px]] | ||
|<!--'''Etch rate in SiO2'''--> - | |<!--'''Etch rate in SiO2'''--> - | ||
|<!--'''Etch rate in resist'''--> - | |<!--'''Etch rate in resist'''--> - | ||
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|<!--'''SEM picture'''--> [[File:CHF3-22.5-H2-10min-0C-C-03.png|200px]] | |<!--'''SEM picture'''--> [[File:CHF3-22.5-H2-10min-0C-C-03.png|200px]] | ||
|<!--'''Redeposition - top view'''--> [[File:CHF3 22.5H2 10min 0C af PA 01.png|200px]] | |<!--'''Redeposition - top view'''--> [[File:CHF3 22.5H2 10min 0C af PA 01.png|200px]] | ||
|<!--'''Etch rate in SiO2'''--> 48 nm/min <br> +/- 11.2% | |<!--'''Etch rate in SiO2'''--> 48 nm/min <br> +/- 11.2% | ||
|<!--'''Etch rate in resist'''--> 23,3 nm/min <br> +/- 13.7% | |<!--'''Etch rate in resist'''--> 23,3 nm/min <br> +/- 13.7% |
Revision as of 15:32, 18 March 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
TEST OF TABLES DESIGN (WORK ON GOING):